公开(公告)号：DE3071248D1

公开(公告)日：1986-01-02

申请号：DE3071248

申请日：1980-08-12

Applicant: IBM

Inventor： HO PAUL SIU-CHUNG ,  KOSTER UWE ,  KUAN TUNG-SHENG ,  OHDOMARI IWAO ,  REISMAN ARNOLD

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/40

Abstract: An electrical contact to a Si substrate (19) is formed by co-depositing Al and Pt or Pd (14) directly on a region of the substrate, and heating to produce a compound of the co-deposit and Si (Al3Pt4Si or Al3P4Si) in said region, an Al conductor layer (12) being applied before or after said heating. The contact is ohmic or Schottky depending on the dopant concentration in said region.