公开(公告)号：JPH10308503A

公开(公告)日：1998-11-17

申请号：JP11647398

申请日：1998-04-27

Applicant: IBM

Inventor： CHU JACK OON ,  KUHARID ESELDIN ISMAIL

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To form Si and SiGe layers on an insulation board. SOLUTION: As for an SOI board and a method for forming an SOI board, at first, Si and/or SiGe strain layers 16, 17 are formed on a first board 12. Then, Si and/or SiO2 layers 18 are formed on the strain layers 16, 17 and a second board 19 with an insulator layer in an upper surface is joined to an upper surface of the strain layer 17. Thereafter, the first board 12 is removed. As a result, a problem for forming a strain Si layer and an SiGe layer on an insulation board is solved.