公开(公告)号：IT8019615D0

公开(公告)日：1980-02-01

申请号：IT1961580

申请日：1980-02-01

Applicant: IBM

Inventor： KUMAR RAY ASIT ,  ARNOLD REISMAN

IPC: C23C8/36 ,  H01L21/31 ,  H01L21/316 ,  H01L

Abstract: Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.

公开(公告)号：IT1151001B

公开(公告)日：1986-12-17

申请号：IT1961580

申请日：1980-02-01

Applicant: IBM

Inventor： KUMAR RAY ASIT ,  REISMAN ARNOLD

IPC: C23C8/36 ,  H01L21/31 ,  H01L21/316 ,  H01L

Abstract: Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure.