公开(公告)号：US3695879A

公开(公告)日：1972-10-03

申请号：US3695879D

申请日：1970-04-20

Applicant: IBM

Inventor： LAMING FRANK P ,  LEVINE SOLOMON L ,  SINCERBOX GLENN T

IPC: G03C5/26 ,  G03C11/06 ,  G03C5/24

CPC classification number: G03C5/26 ,  G03C11/06 ,  Y10S359/90 ,  Y10S430/146

Abstract: LASER-INTERROGATED HOLOGRAMS PRODUCED IN SILVER HALIDE EMULSIONS BY AN ETCH-BLEACH DEVELOPMENT PROCESS HAVE DESIRABLE PROPERTIES OF LIGHT DIFFRACTION EFFICIENCY BUT ARE SUBJECT TO RAPID LOSS OF DIFFRACTION EFFECTIVENESS OVER PERIODS OF EXPOSURE TO HIGH ENERGY DENSITY LEVELS OF INTERROGATION LGHT. IT HAS BEEN FOUND THAT POST-DEVELOPMENT HARDENING, ESPECIALLY BY SUCCESSIVE APPLICATION OF A HARDENING SOLUTION AND HEAT CAN PROLONG EFFECTIVENESS HALFLIFE BY A CONSIDERABLE FACTOR. THE HEATING STEP IS MOST EFFECTIVE WHEN CARRIED OUT IN VACUUM OR INERT GASEOUS ATMOSPHERE.

公开(公告)号：US3895147A

公开(公告)日：1975-07-15

申请号：US21225871

申请日：1971-12-27

Applicant: IBM

Inventor： AHN KIE Y ,  LAMING FRANK P

IPC: H01L21/027 ,  C23F1/00 ,  G03F1/54 ,  G02B5/20

CPC classification number: G03F1/54 ,  Y10T428/20 ,  Y10T428/22 ,  Y10T428/24479 ,  Y10T428/24802

Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth elements capable of existing in the divalent state (Eu2 , Sm2 , Yb2 ) are combined with group VI elements (O, S, Se, Te) to provide the masking material. Trivalent rare earth elements, such as Eu3 , are also suitable if proper dopants are present. An example is Eu2O3 doped with Fe2O3. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image definition during use.

Abstract translation: 用于制造半导体和各种小部件的面具。 能够以二价态存在的稀土元素（Eu2 +，Sm2 +，Yb2 +）与VI族元素（O，S，Se，Te）组合以提供掩蔽材料。 如果存在适当的掺杂剂，则三价稀土元素如Eu 3+也是合适的。 一个例子是掺杂有Fe2O3的Eu2O3。 该掩模材料比正在制造的组件更硬，并且对于在光致抗蚀剂技术中使用的波长是不透明的，同时对宽的厚度范围内的可见波长是透明的。 掩模可以包括在衬底上的图案化层或具有不同厚度的区域的图案化块状晶体。 基体如钠钙玻璃，蓝宝石，石英等都是合适的。 掩模材料可以沉积成具有良好均匀性和良好光学性能的大面积膜。 该材料易于蚀刻，但不受光致抗蚀剂加工中使用的材料的侵蚀。 其反射率非常低，从而在使用过程中提供了方便的对准和良好的图像定义。