公开(公告)号：GB1291673A

公开(公告)日：1972-10-04

申请号：GB2462971

申请日：1971-04-19

Applicant: IBM

Inventor： LAMING FRANK PAUL ,  LEVINE SOLOMON LEON ,  SINCERBOX GLENN TAVERNIA

IPC: G03C5/26 ,  G03C11/06

Abstract: 1291673 Processing holograms INTERNATIONAL BUSINESS MACHINES CORP 19 April 1971 [20 April 1970] 24629/71 Heading G2C The optical diffraction stability of laser interrogated holograms which have been developed by an etch-bleach process from silver halide gelatin media is improved by treating the hologram with a solution of a gelatin hardening agent comprising a dichromate/chloride solution or a formaldehyde solution. The hardening treatment may be followed by heating in air, vacuum, helium or nitrogen and may be preceded by a U/V exposure.

公开(公告)号：DE2261119A1

公开(公告)日：1973-07-12

申请号：DE2261119

申请日：1972-12-14

Applicant: IBM

Inventor： AHN KIE YEUNG ,  LAMING FRANK PAUL

IPC: H01L21/027 ,  C23F1/00 ,  G03F1/54 ,  G03F1/00

Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth elements capable of existing in the divalent state (Eu2 , Sm2 , Yb2 ) are combined with group VI elements (O, S, Se, Te) to provide the masking material. Trivalent rare earth elements, such as Eu3 , are also suitable if proper dopants are present. An example is Eu2O3 doped with Fe2O3. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image definition during use.