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公开(公告)号：DE3785826T2
公开(公告)日：1993-10-28
申请号：DE3785826
申请日：1987-05-05
Applicant: IBM
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公开(公告)号：DE3070244D1
公开(公告)日：1985-04-04
申请号：DE3070244
申请日：1980-11-18
Applicant: IBM
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3.发明专利
公开(公告)号：DE3060701D1
公开(公告)日：1982-09-16
申请号：DE3060701
申请日：1980-04-25
Applicant: IBM
Inventor： AHN KIE YEUNG , COX DANIEL EDWARD
IPC: C23F4/00 , C23F1/12 , H01L21/3065 , H01L21/311 , H01L21/3213 , C23F1/00
Abstract: A method for etching materials in which a solid, located in the vicinity of the substrate, is used to provide reactive species for etching the substrate. In contrast with prior art etching techniques, an ion beam is provided which strikes a solid source located in the vicinity of the substrate. Reactive gas species are given off by the solid source when it is hit by the ion beam and these species etch the substrate. Etch rates can be enhanced or retarded depending upon the composition of the solid mask. The process has particular utility in etching generally active metals such as Ti, Nb, Ta, NiFe, etc. which undergo a large change in etch rate when mixed gases, such as argon plus O2, CF4, CO, or CO2 (singularly or in combination) are used. As an example, solid TEFLON* can be used to surround the substrate during etching in order to generate active species, such as C and F, for etching of materials such as Ti, Si, NiFe, etc. Conductors and dielectrics can also be etched by this technique. * A trademark of E. I. Du Pont de Nemours.
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公开(公告)号：DE68918927D1
公开(公告)日：1994-11-24
申请号：DE68918927
申请日：1989-12-18
Applicant: IBM
Inventor： AHN KIE YEUNG , KIM JUNGIHL , LAURO PAUL , WALKER GEORGE FREDERICK
Abstract: A structure, and method of fabrication thereof, having a polymeric layer (20) containing a pattern of oxide particles (44) embedded therein. The regions (26, 28, 32, 38, 40) of the polymeric material (20) having the oxide particles (44) therein have an optical reflectivity or transmitivity which is different than the optical reflectivity or transmitivity of the regions (30, 34, 36, 42) of the polymeric material (20) without the oxide particles (44). The structure can be used as an optical storage device.
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公开(公告)号：DE3473669D1
公开(公告)日：1988-09-29
申请号：DE3473669
申请日：1984-05-16
Applicant: IBM
Inventor： AHN KIE YEUNG , DISTEFANO THOMAS HERMAN , JIPSON VICTOR BURR
Abstract: An optical storage medium incorporates stacked servo and data layers with the pattern of the servo layer being prepared prior to preparation of the data layer. The servo pattern comprises an undulation in a very thin film of high optical index material on the surface of the substrate of the medium. The undulating layer containing the servo pattern is separated from the active layer of the medium by a thin dielectric spacer film. The data layer is employed for formation of vesicular, or ablative or other marks forming surface discontinuities formed by any of the usual pit forming techniques. The preformatted servo information formed in the servo layer as buried undulations in the thin film is read out in amplitude or phase contrast. The thin undulating layer is of a significantly different index of refraction from the substrate and the next intervening layer. This layer can be transparent or semi-transparent. A smoothing layer is then applied over the phase-contrast layer to reduce any undulations at the top surface on which the active layer is formed. The amount of energy absorbed by the active layer of the structure is optimized for the data recording wavelength by choice of thickness of the smoothing layer.
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Patent Agency Ranking
公开(公告)号：DE3273164D1
公开(公告)日：1986-10-16
申请号：DE3273164
申请日：1982-06-22
Applicant: IBM
Inventor： TU KING NING , AHN KIE YEUNG , HERD SIGRID RENEE , LEE MICHAEL HEINO , WIEDER HAROLD , ONTON AARE
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公开(公告)号：DE2261123A1
公开(公告)日：1973-07-12
申请号：DE2261123
申请日：1972-12-14
Applicant: IBM
Inventor： AHN KIE YEUNG , CUOMO JEROME JOHN
IPC: H01L21/027 , C23F1/00 , G03F1/54 , G03F1/00
Abstract: A mask for the manufacture of semiconductor and various small components. Rare earth orthofertites, such as GdFeO3, as well as YFeO3, and LaFeO3 comprises the masking material. Rare earth combinations, such as (Gd, Eu) 1FeO3, can also be used for the masking material. This masking material is harder than the components being manufactured and is opaque to the wavelength used in photoresist techniques while being transparent to visible wavelengths over broad thickness ranges. The mask can comprise a patterned layer on a substrate or patterned bulk crystals having regions of different thickness. Substrates such as soda-lime glass, sapphire, quartz, etc. are suitable. The masking material can be deposited as large area films having good uniformity and good optical properties. The material is readily etched but is not attacked by materials used in photoresist processing. Its reflectivity is very low, thereby providing easy alignment and good image defination during use.
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公开(公告)号：DE3785826D1
公开(公告)日：1993-06-17
申请号：DE3785826
申请日：1987-05-05
Applicant: IBM
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公开(公告)号：DE2555299A1
公开(公告)日：1976-09-16
申请号：DE2555299
申请日：1975-12-09
Applicant: IBM
Inventor： AHN KIE YEUNG , HATZAKIS MICHAEL , POWERS JOHN VINCENT
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公开(公告)号：DE68918927T2
公开(公告)日：1995-04-20
申请号：DE68918927
申请日：1989-12-18
Applicant: IBM
Inventor： AHN KIE YEUNG , KIM JUNGIHL , LAURO PAUL , WALKER GEORGE FREDERICK
Abstract: A structure, and method of fabrication thereof, having a polymeric layer (20) containing a pattern of oxide particles (44) embedded therein. The regions (26, 28, 32, 38, 40) of the polymeric material (20) having the oxide particles (44) therein have an optical reflectivity or transmitivity which is different than the optical reflectivity or transmitivity of the regions (30, 34, 36, 42) of the polymeric material (20) without the oxide particles (44). The structure can be used as an optical storage device.
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