公开(公告)号：EP0206055A2

公开(公告)日：1986-12-30

申请号：EP86107740

申请日：1986-06-06

Applicant: IBM

Inventor： BIANCHI JACQUELINE KAY ,  GDULA ROBERT ANTHONY ,  LANGE DENNIS JOHN

IPC: C04B41/53 ,  C04B41/91 ,  H01L21/311

CPC classification number: C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  H01L21/31116 ,  C04B35/00

Abstract: An etch gas consisting of SF6, a noble gas and a small percentage of a carbon-containing gas is used in a reactive ion etching process for etching a ceramic partially masked by an organic photoresist.

Abstract translation: 在由有机光致抗蚀剂部分掩蔽的陶瓷蚀刻的反应离子蚀刻工艺中使用由SF 6，惰性气体和少量含碳气体构成的蚀刻气体。

公开(公告)号：DE3674477D1

公开(公告)日：1990-10-31

申请号：DE3674477

申请日：1986-06-06

Applicant: IBM

Inventor： BIANCHI JACQUELINE KAY ,  GDULA ROBERT ANTHONY ,  LANGE DENNIS JOHN

IPC: C04B41/53 ,  C04B41/91 ,  H01L21/311 ,  H01L21/31

Abstract: An etch gas consisting of SF6, a noble gas and a small percentage of a carbon-containing gas is used in a reactive ion etching process for etching a ceramic partially masked by an organic photoresist.