公开(公告)号：EP0206055A2

公开(公告)日：1986-12-30

申请号：EP86107740

申请日：1986-06-06

Applicant: IBM

Inventor： BIANCHI JACQUELINE KAY ,  GDULA ROBERT ANTHONY ,  LANGE DENNIS JOHN

IPC: C04B41/53 ,  C04B41/91 ,  H01L21/311

CPC classification number: C04B41/009 ,  C04B41/5346 ,  C04B41/91 ,  H01L21/31116 ,  C04B35/00

Abstract: An etch gas consisting of SF6, a noble gas and a small percentage of a carbon-containing gas is used in a reactive ion etching process for etching a ceramic partially masked by an organic photoresist.

Abstract translation: 在由有机光致抗蚀剂部分掩蔽的陶瓷蚀刻的反应离子蚀刻工艺中使用由SF 6，惰性气体和少量含碳气体构成的蚀刻气体。

公开(公告)号：DE2539943A1

公开(公告)日：1976-05-13

申请号：DE2539943

申请日：1975-09-09

Applicant: IBM

Inventor： GDULA ROBERT ANTHONY ,  RAIDER STANLEY IRWIN ,  REVITZ MARTIN

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/00 ,  H01L21/324

公开(公告)号：DE3065407D1

公开(公告)日：1983-12-01

申请号：DE3065407

申请日：1980-02-08

Applicant: IBM

Inventor： FORGET LAWRENCE EDMUND ,  GDULA ROBERT ANTHONY ,  HOLLIS JOSEPH CARTER

IPC: C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/263

Abstract: Disclosed is an improved Reactive Ion Etch (RIE) technique for etching polysilicon or single crystal silicon as must be done in Very Large Scale Integration (VLSI) using silicon technology. It teaches the use of an etch gas that consists of a mixture of sulfur hexafluoride (SF6) and chlorine (Cl2) diluted with inert gas. This etch gas allows an RIE process which combines the very desirable features of selectivity (high Si/SiO2 etch rate ratio) and directionality which creates vertical side walls on the etched features. Vertical side walls mean no mask undercutting, hence zero etch bias. It is particularly applicable to device processing in which micron or sub-micron sized lines must be fabricated to extremely close tolerances. It is a distinct improvement over wet chemical etching or plasma etching as it is conventionally applied.

公开(公告)号：DE2236634A1

公开(公告)日：1973-03-01

申请号：DE2236634

申请日：1972-07-26

Applicant: IBM

Inventor： GDULA ROBERT ANTHONY

IPC: C04B35/622 ,  C04B33/00 ,  C04B35/00 ,  C04B35/10 ,  H01B3/00 ,  H01B3/02 ,  H05K1/03 ,  H05K3/00

公开(公告)号：DE3674477D1

公开(公告)日：1990-10-31

申请号：DE3674477

申请日：1986-06-06

Applicant: IBM

Inventor： BIANCHI JACQUELINE KAY ,  GDULA ROBERT ANTHONY ,  LANGE DENNIS JOHN

IPC: C04B41/53 ,  C04B41/91 ,  H01L21/311 ,  H01L21/31

Abstract: An etch gas consisting of SF6, a noble gas and a small percentage of a carbon-containing gas is used in a reactive ion etching process for etching a ceramic partially masked by an organic photoresist.

公开(公告)号：DE3160740D1

公开(公告)日：1983-09-15

申请号：DE3160740

申请日：1981-03-06

Applicant: IBM

Inventor： FORGET LAWRENCE EDMUND ,  GDULA ROBERT ANTHONY ,  HOLLIS JOSEPH CARTER

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/306 ,  C23F1/00

Abstract: The method teaches the etching of the unmasked areas of a silicon body covered partly by a mask of an insulating material in an R.F. plasma consisting essentially of X parts SiF4, Y parts Cl2, and Z parts of an inert gas wherein X + Y + Z is essentially one hundred, X + Y is less than about 25 parts, and X and Y are respectively greater than zero. The mask material - preferably SiO2 - is selected according to its resistance against the R.F. plasma. The etching is directional perpendicularly to the surface of the silicon body. … The method is used in forming Very Large Scale Integration (VLSI) structures.