公开(公告)号：JPH10308465A

公开(公告)日：1998-11-17

申请号：JP10919398

申请日：1998-04-20

Applicant: IBM

Inventor： JAMES HOWARD COVELL II ,  LANIE R BOLDE ,  DAVID LYN EDWARDS ,  LUIS SIGMUND GOLDMAN ,  GRUBER PETER A ,  HILTON T TOY

IPC: H01L23/02 ,  H01L23/10

Abstract: PROBLEM TO BE SOLVED: To enable a semiconductor substrate to be hermetically sealed up in a cap whose thermal expansion coefficient is different from that of the substrate by a method wherein a first thin solder interconnection layer is restrained from reflowing on a high-melting thick solder wall so as to enable a solder seal band to retain its layered structure. SOLUTION: A solder seal 23 is joined to a substrate 10 with a thin solder interconnection layer 41 formed on the substrate 10 and a thick solder wall 43 cast on a cap 20. The thick solder wall 43 is set different in chemical composition from the thin solder interconnection layer 41 so as to have a higher melting point than the thin solder interconnection layer 41. By this setup, the interconnection layer 41 can be reflowed so as to mount the cap 20 on the substrate 10 without melting or deflecting the thick wall 43. Therefore, a solder seal of this constitution is capable of coping with a case that a gap between a cap and a substrate is a few times as large as usual.