公开(公告)号：US3566306A

公开(公告)日：1971-02-23

申请号：US3566306D

申请日：1969-06-30

Applicant: IBM

Inventor： ESPOSITO RALPH M ,  HAUGE PETER S ,  LANZA CONRAD

IPC: H01L47/00 ,  H03B9/12 ,  H03B7/00

CPC classification number: H03B9/12 ,  H01L47/00

Abstract: THE CONTROLLABLE OSCILLATOR INCLUDES A CONVENTIONAL GUNN OSCILLATOR FORMED OF A BODY OF N TYPE GALLIUM ARSENIDE WITH ORMIC CONTACTS AT BOTH ENDS. THE NOL PRODUCT FOR THE BODY IS AT LEAST TWICE THE CRITICAL VALUE FOR SUSTAINING DOMAIN NUCLEATION AND PROPAGATION. AN ABOVE-THRESHOLD VOLTAGE IS APPLIED TO THE BODY TO PRODUCE HIGH FREQUENCY OSCILLATIONS. THE OSCILLATIONS ARE CONTROLLED BY SIGNALS APPLIED TO A P TYPE CONTACT MADE TO THE BODY AT A DISTANCE D FROM THE AMOD SUCH THAT NOD IS LESS THAN THE CRITICAL VALUE FOR OSCILLATIONS. APPLICATION OF A REVERSE BIAS SIGNAL TO THIS REGION CAUSES THE OSCILLATIONS TO STOP AND A STABLE FIELD CONDITION TO BE PRODUCED WITH A HIGH FIELD NEAR THE ANODE.

公开(公告)号：US3535654A

公开(公告)日：1970-10-20

申请号：US3535654D

申请日：1967-12-04

Applicant: IBM

Inventor： LANZA CONRAD

IPC: H01L47/02 ,  H03K3/02 ,  H03B7/06

CPC classification number: H03K3/02 ,  H01L47/026

公开(公告)号：US3922583A

公开(公告)日：1975-11-25

申请号：US48375974

申请日：1974-06-27

Applicant: IBM

Inventor： LANZA CONRAD

IPC: G09G3/288 ,  G11C11/28 ,  H05B37/00

CPC classification number: G09G3/288 ,  G09G3/2807 ,  G11C11/28

Abstract: An A. C. gas discharge display and memory device is driven with sustain pulses which operate at a frequency such that the sustain pulses terminate within the region of the gas discharge curve slightly after currents reach their maximum and flow begins to terminate. Frequencies are selected such that for the lower applied voltages, cells will not fire. To permit operation within this region of the discharge curve at frequencies which will allow deionization, relatively slow risetime sustain pulses are used. For Neon with traces of Argon at pressures between 400 to 800 Torr., alternating sustain pulses having a frequency range of from 40 to 80 K Hz and a risetime range of from 1.8 to 2.2 Mu sec. have been found to be optimum.

Abstract translation: 气体放电显示和存储器件由维持脉冲驱动，其维持脉冲的工作频率使得维持脉冲在电流达到其最大值之后略微终止于气体放电曲线的区域内，流动开始终止。 选择频率使得对于较低的施加电压，电池不会起火。 为了允许在允许去离子的频率下在放电曲线的该区域内进行操作，使用相对缓慢的上升时间维持脉冲。 对于在400至800托之间的压力下具有氩气痕迹的氖，具有40至80KHz的频率范围和1.8至2.2μsec的上升时间范围的交替维持脉冲。 已被发现是最佳的。

公开(公告)号：US3625594A

公开(公告)日：1971-12-07

申请号：US3625594D

申请日：1969-06-30

Applicant: IBM

Inventor： LANZA CONRAD

IPC: G02F1/015 ,  G02F1/29 ,  G02F1/28

CPC classification number: G02F1/29 ,  G02F1/015 ,  G02F2001/0154

Abstract: The beam deflector is formed of a body of n-type gallium arsenide. Ohmic contacts are made at opposite ends of the body. The doping concentration (no) and the length (l) of the body are such that the nol product is less than the critical value for inherent bulk oscillations. A voltage above a threshold value applied to the body produces a field gradient across the body. This field gradient produces a gradient in index of refraction for light at energies close to the band gap of the gallium arsenide. The source of light to be deflected is a gallium arsenide injection laser which emits light at less than band gap energy. The laser beam is passed through the gallium arsenide deflector and deflected under the control of voltages applied across the ohmic contacts.

公开(公告)号：FR2276684A1

公开(公告)日：1976-01-23

申请号：FR7516542

申请日：1975-05-21

Applicant: IBM

Inventor： LANZA CONRAD

IPC: G09G3/288 ,  G11C11/28 ,  H01J17/36 ,  H01J17/48 ,  G09X

Abstract: An A. C. gas discharge display and memory device is driven with sustain pulses which operate at a frequency such that the sustain pulses terminate within the region of the gas discharge curve slightly after currents reach their maximum and flow begins to terminate. Frequencies are selected such that for the lower applied voltages, cells will not fire. To permit operation within this region of the discharge curve at frequencies which will allow deionization, relatively slow risetime sustain pulses are used. For Neon with traces of Argon at pressures between 400 to 800 Torr., alternating sustain pulses having a frequency range of from 40 to 80 K Hz and a risetime range of from 1.8 to 2.2 mu sec. have been found to be optimum.

公开(公告)号：DE2222872A1

公开(公告)日：1972-12-28

申请号：DE2222872

申请日：1972-05-10

Applicant: IBM

Inventor： LOUIS KONNERTH KARL ,  LANZA CONRAD

IPC: G09G3/29 ,  H01J17/49 ,  H01J61/92

Abstract: A gas panel display system produces a moving display as a result of movement of at least one set of conductors. A first set of parallel conductors aligned parallel to the direction of motion of the display image is mounted behind a display window in a gas tight display housing which contains an ionizeable gas. A second perpendicular set of parallel conductors insulated from the ionizeable gas is mounted on a moving belt which carries the display image past the window. Information is written into the display by applying ignition pulses to a set of writing electrodes aligned along a line parallel to the conductors of the second set. The ignition pulses ionize the gas between the writing electrodes and the second conductors, thereby creating activated display points along the second conductors. The information written into the activated display points is made visible by applying a sustaining voltage between the conductor sets to sustain a glow discharge in the ionizeable gas at the activated points. An erase roller located just before the writing electrodes erases any remaining, previously written, information.

公开(公告)号：DE2527487A1

公开(公告)日：1976-01-15

申请号：DE2527487

申请日：1975-06-20

Applicant: IBM

Inventor： LANZA CONRAD

IPC: G09G3/2807 ,  G09G3/288 ,  G09F9/32

Abstract: Level holding impulses with amplitudes below the burn out potential are continuously supplied onto the grid so that after supplying the ignition impulses to the gas discharge path in sequence a periodic transformation takes place and that particular injection condition is held till put-out by the extinguish signals. The pulse frequency of the level holding alternating impulses is higher than 40 KHz. set by impulse raising times of not more than 1.8 u sec. Impulses frequency at increment times of 1.8 to 2.2 u secs. are set between 40-80 KHz and with pulse frequencies of 80 KHz increment times of 2 u sec. are chosen.

公开(公告)号：DE1591224A1

公开(公告)日：1970-09-24

申请号：DE1591224

申请日：1967-10-12

Applicant: IBM

Inventor： LANZA CONRAD

IPC: H01L47/00 ,  H03B9/12

Abstract: 1,170,984. Gunn effect oscillators. INTERNATIONAL BUSINESS MACHINES CORP. 8 Aug., 1967 [13 Jan., 1967], No. 36322/67. Heading H3T. [Also in Division H1] In a Gunn effect oscillator the Gunn diode has a geometry or a resistivity distribution such that for a given potential difference between the diode terminals the electric field in the diode body diminishes in the direction of the cathodeanode path. In this way the field can be more than the forming threshold field adjacent the cathode but fall below the domain-sustaining field at a point between the terminals, the location of this point and hence the frequency of oscillation being dependent on the magnitude of the energizing voltage. Fig. 3A shows a suitable Gunn diode consisting of a layer 1 of appropriate semi-conductor material on which have been deposited a central " dot " electrode 5 and a peripheral arcuate electrode 7. Using 5 as cathode and 7 as anode a given applied voltage will produce in the layer a field having a maximum value adjacent the cathode and a minimum value adjacent the anode. Figs: 1A and 1B (not shown) depict a like structure in which the anode is a complete ring surrounding the cathode. The layer 1 in this embodiment is an active semi-conductor layer epitaxially deposited on an inactive semi-conductor substrate and Fig. 1B shows the layer connected to an adjustable voltage source to constitute an oscillator of controllable frequency. Fig. 3B (not shown), depicts a diode in which the electric field variation depends on non-uniform resistivity; it consists of an epitaxially deposited " graded doping " active layer on an inactive semi-conductor substrate. The active layers in the above diodes may be of Ga As, In P, Cd Te, In As under pressure or Zn Se.

公开(公告)号：AU7671881A

公开(公告)日：1982-05-13

申请号：AU7671881

申请日：1981-10-22

Applicant: IBM

Inventor： LANZA CONRAD ,  WOODALL JERRY MCPHERSON

IPC: H01L31/14 ,  H01L31/153 ,  H01L33/00

公开(公告)号：DE1766970B1

公开(公告)日：1971-01-14

申请号：DE1766970

申请日：1968-08-22

Applicant: IBM

Inventor： LANZA CONRAD

IPC: H01L47/02 ,  H03K3/02 ,  H03B