公开(公告)号：AT487230T

公开(公告)日：2010-11-15

申请号：AT06778031

申请日：2006-07-27

Applicant: IBM

Inventor： HICHRI HABIB ,  LARSEN KIMBERLY ,  MAYNARD HELEN ,  PETRARCA KEVIN

IPC: H01L21/02 ,  H01F17/00 ,  H01F41/04 ,  H01F41/10 ,  H01L21/768

Abstract: The invention forms integrated circuit devices of similar structure and dissimilar depth, such as interconnects and inductors, simultaneously. The invention deposits a conformal polymer over an area on a substrate with vias and an area without vias. Simultaneously, cavities are formed in the areas with and without vias. The depth of the cavities formed in the areas with vias will extend deeper into the substrate than the cavities formed in areas without vias. Such occurs because the polymer deposits unevenly along the surface of the substrate and more specifically, more thinly in areas with underlying depressions. Once filled with a conductive material, cavities which extend more deeply into the substrate, which were formed in areas with vias, become inductors, and the cavities which extend less deeply into the substrate, which were formed in areas without vias, become interconnects.

公开(公告)号：DE602006018049D1

公开(公告)日：2010-12-16

申请号：DE602006018049

申请日：2006-07-27

Applicant: IBM

Inventor： HICHRI HABIB ,  LARSEN KIMBERLY ,  MAYNARD HELEN ,  PETRARCA KEVIN

IPC: H01L21/02 ,  H01F17/00 ,  H01F41/04 ,  H01F41/10 ,  H01L21/768