公开(公告)号：DE68915763T2

公开(公告)日：1994-12-08

申请号：DE68915763

申请日：1989-09-07

Applicant: IBM

Inventor： GASSER MARCEL ,  LATTA ERNST EBERHARD DR

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S3/025

Abstract: A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

公开(公告)号：DE68915763D1

公开(公告)日：1994-07-07

申请号：DE68915763

申请日：1989-09-07

Applicant: IBM

Inventor： GASSER MARCEL ,  LATTA ERNST EBERHARD DR

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S3/025

Abstract: A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.