公开(公告)号：EP0814544A2

公开(公告)日：1997-12-29

申请号：EP97109746

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/028 ,  H01S3/025

CPC classification number: H01S5/028

Abstract: A semiconductor laser diode (30), comprising a waveguide being terminated by a back facet (34) and a front facet (33). These facets (33, 34) comprise a front facet coating (31B) and a back facet coating (21A) having a reflectivity providing for controlled decoupling of light at said front facet (33) from the standing lightwave in said waveguide. The front facet coating (31B) comprises a stack of layers providing for a phase shift of the standing lightwave within said waveguide such that the intensity of the lightwave at said front facet (33), where light it is decoupled from said standing lightwave, has a relative minimum.

Abstract translation: 一种半导体激光二极管（30），包括由后面（34）和前刻面（33）端接的波导。 这些小平面（33,34）包括前小面涂层（31B）和后面涂层（21A），后面涂层（21A）具有反射率，提供所述前刻面（33）处的光与所述波导中的驻波光线的受控去耦。 前面小面涂层（31B）包括一叠层，用于使所述波导管内的立体光波相移，使得所述前刻面（33）处的光线与所述直立光波分离的光波强度具有 相对最小。

公开(公告)号：JPH1056234A

公开(公告)日：1998-02-24

申请号：JP16551997

申请日：1997-06-23

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  GASSER MARCEL ,  JAKUBOWICZ ABRAM ,  LATTA ERNST-EBERHARD ,  ROENTGEN PETER

IPC: H01S5/00 ,  H01S5/028 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a reliable semiconductor laser diode, in which a catastrophic optical mirror damage(COMD) is reduced and deterioration behavior is significantly improved, and its manufacturing method. SOLUTION: In a semiconductor laser diode 30 containing a waveguide which ends at a rear end surface 34 and a front end surface 33, these end surfaces contain a rear end surface coating 21A and a front end surface coating 31B having reflectance which causes controlled decoupling from the standing light wave of the light in the front end surface 33 in the waveguide. The front end surface coating 31B contains a stack of layers which causes phase shift of the standing light wave in the waveguide so that intensity of the light wave in the front end surface 33 where the light is decoupled from the standing light wave has a minimum value.

公开(公告)号：DE69714815T2

公开(公告)日：2003-04-30

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/02

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：DE2459183A1

公开(公告)日：1975-09-04

申请号：DE2459183

申请日：1974-12-14

Applicant: IBM

Inventor： DAETWILER KURT ,  GASSER MARCEL

IPC: H05K3/00 ,  G03F1/00 ,  G03F1/08 ,  G03F7/095 ,  G03F7/20 ,  H01L21/266 ,  H01L21/28 ,  H01L21/3205 ,  H05K3/06 ,  H01L21/31

公开(公告)号：CA2018501C

公开(公告)日：1995-08-15

申请号：CA2018501

申请日：1990-06-07

Applicant: IBM

Inventor： GASSER MARCEL ,  LATTA ERNST EBERHARD

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S3/06

Abstract: A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

公开(公告)号：DE68915763T2

公开(公告)日：1994-12-08

申请号：DE68915763

申请日：1989-09-07

Applicant: IBM

Inventor： GASSER MARCEL ,  LATTA ERNST EBERHARD DR

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01S3/025

Abstract: A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

公开(公告)号：DE69714815T8

公开(公告)日：2007-10-11

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/02 ,  H01S5/028

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

公开(公告)号：DE69006353T2

公开(公告)日：1994-06-23

申请号：DE69006353

申请日：1990-05-25

Applicant: IBM

Inventor： BROOM RONALD F DR ,  GASSER MARCEL ,  HARDER CHRISTOPH DR ,  LATTA ERNST-EBERHARD DR ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

公开(公告)号：DE69006353D1

公开(公告)日：1994-03-10

申请号：DE69006353

申请日：1990-05-25

Applicant: IBM

Inventor： BROOM RONALD F DR ,  GASSER MARCEL ,  HARDER CHRISTOPH DR ,  LATTA ERNST-EBERHARD DR ,  OOSENBRUG ALBERTUS ,  RICHARD HEINZ ,  VETTIGER PETER

IPC: B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02 ,  H01L21/00

Abstract: A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer (11), provided with scribe lines (15) defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands (12,13) and guiding it around a curved, large radius surface (21) thereby applying a bending moment. With a moment of sufficient magnitude, individual bars (22) are broken off the wafer as this is advanced, the bars having front- and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighbouring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

公开(公告)号：DE69714815D1

公开(公告)日：2002-09-26

申请号：DE69714815

申请日：1997-06-16

Applicant: IBM

Inventor： DIETRICH HANS PETER ,  LATTA ERNST-EBERHARD ,  GASSER MARCEL ,  ROENTGEN PETER ,  JAKUBOWICZ ABRAM

IPC: H01S5/00 ,  H01S5/028 ,  H01S5/02

Abstract: A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.