SELF-BIASED RESISTOR STRUCTURE AND APPLICATION TO INTERFACE CIRCUITS REALIZATION

    公开(公告)号:DE3276513D1

    公开(公告)日:1987-07-09

    申请号:DE3276513

    申请日:1982-11-26

    Applicant: IBM IBM FRANCE

    Abstract: A monolithically integrated resistive attenuator is autobiased from an input bipolar signal the amplitude of which is higher than the integrated circuit voltage supplies. The resistive attenuator is arranged in a first pocket formed in an epitaxial layer, and is connected between the input bipolar signal and ground. An intermediate tap produces an output signal. A diode and capacitor are formed in a second pocket. The diode is connected between the input bipolar signals and the epitaxial layer while the capacitor is connected between the epitaxial layer and the isolation walls thereof. The positive half-periods of the input bipolar signal charges the capacitor, which in turn biases the epitaxial layers. The attenuator, therefore, can be monolithically integrated into a silicon chip and remain isolated for all values of the input bipolar signal. The output signal produced by the attenuator is less than the integrated circuit voltage supplies so that the circuits driven by the output signal can be integrated without difficulties.

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