公开(公告)号：DE69024468D1

公开(公告)日：1996-02-08

申请号：DE69024468

申请日：1990-10-18

Applicant: IBM

Inventor： HODGSON RODNEY T ,  LEGOUES FRANCOISE K ,  WELLS OLIVER C

IPC: H01J37/20 ,  H01J37/14 ,  H01J37/244 ,  H01J37/256 ,  H01J37/28 ,  H01J37/252

Abstract: An electron microscope which includes a detector (18) which is located in the magnetic field used to focus the primary electron beam onto the sample (10). The focussing magnetic field is used to energy-filter and/or energy analyze the scattered electrons without the need for additional equipment, such as a retarding-field energy filter. The magnetic field of the condenser-objective lens (or of any other type of magnetic lens) of the microscope provides the filtering and/or analyzing action, and the detector (18) can be located so as to collect only low-loss electrons.

公开(公告)号：CA2062134C

公开(公告)日：1997-03-25

申请号：CA2062134

申请日：1992-03-02

Applicant: IBM

Inventor： LEGOUES FRANCOISE K ,  MEYERSON BERNARD S

IPC: G02B6/13 ,  H01L21/20 ,  H01L29/15 ,  H01L31/028 ,  H01L31/036 ,  H01L31/18 ,  H01S5/32 ,  H01S5/327 ,  H01L29/02 ,  H01S3/025 ,  G02B6/12 ,  G02B5/20 ,  H01S3/08

Abstract: A multi-layered structure (10) and process for forming it are described, incorporating a single crystal substrate (12), a plurality of epitaxial layers (16, 18, 22, 40, 42, 44, 48) having graded composition wherein the layers have changing lattice spacings not exceeding about 2 percent per 100,0 nm of thickness whereby misfit dislocations (54 ... 59) are formed to relieve strain and then move to the edges of respective layers. The invention overcomes the problem of large numbers of misfit dislocations threading to the surface of the top layer, especially during device processing at at temperatures in a range from 700 to 900 degrees Celsius. Fully relaxed, incommensurate structures having low defect densities are obtained, where arbitrary combinations of materials can be used.

公开(公告)号：DE69024468T2

公开(公告)日：1996-07-11

申请号：DE69024468

申请日：1990-10-18

Applicant: IBM

Inventor： HODGSON RODNEY T ,  LEGOUES FRANCOISE K ,  WELLS OLIVER C

IPC: H01J37/20 ,  H01J37/14 ,  H01J37/244 ,  H01J37/256 ,  H01J37/28 ,  H01J37/252

Abstract: An electron microscope which includes a detector (18) which is located in the magnetic field used to focus the primary electron beam onto the sample (10). The focussing magnetic field is used to energy-filter and/or energy analyze the scattered electrons without the need for additional equipment, such as a retarding-field energy filter. The magnetic field of the condenser-objective lens (or of any other type of magnetic lens) of the microscope provides the filtering and/or analyzing action, and the detector (18) can be located so as to collect only low-loss electrons.

公开(公告)号：BR9201914A

公开(公告)日：1993-01-12

申请号：BR9201914

申请日：1992-05-21

Applicant: IBM

Inventor： LEGOUES FRANCOISE K ,  MEYERSON BERNARD S

IPC: G02B6/13 ,  H01L21/20 ,  H01L29/15 ,  H01L31/028 ,  H01L31/036 ,  H01L31/18 ,  H01S5/32 ,  H01S5/327 ,  H01S3/18

Abstract: A multi-layered structure (10) and process for forming it are described, incorporating a single crystal substrate (12), a plurality of epitaxial layers (16, 18, 22, 40, 42, 44, 48) having graded composition wherein the layers have changing lattice spacings not exceeding about 2 percent per 100,0 nm of thickness whereby misfit dislocations (54 ... 59) are formed to relieve strain and then move to the edges of respective layers. The invention overcomes the problem of large numbers of misfit dislocations threading to the surface of the top layer, especially during device processing at at temperatures in a range from 700 to 900 degrees Celsius. Fully relaxed, incommensurate structures having low defect densities are obtained, where arbitrary combinations of materials can be used.

公开(公告)号：CA2062134A1

公开(公告)日：1992-12-01

申请号：CA2062134

申请日：1992-03-02

Applicant: IBM

Inventor： LEGOUES FRANCOISE K ,  MEYERSON BERNARD S

IPC: G02B6/13 ,  H01L21/20 ,  H01L29/15 ,  H01L31/028 ,  H01L31/036 ,  H01L31/18 ,  H01S5/32 ,  H01S5/327 ,  H01L29/02 ,  H01S3/025 ,  H01S3/08 ,  G02B6/12 ,  G02B5/20

Abstract: Y09-91-061 LOW DEFECT DENSITY/ARBITRARY LATTICE CONSTANT HETEROEPITAXIAL LAYERS of the Invention A multi-layered structure and process for forming it are described, incorporating a single crystal substrate, a plurality of epitaxial layers having graded composition wherein the layers have changing lattice spacings not exceeding about 2 percent per 1000.ANG. of thickness whereby misfit dislocations are formed to relieve strain and then move to the edges of respective layers. The invention overcomes the problem of large numbers of misfit dislocations threading to the surface of the top layer, especially during device processing at at temperatures in a range from 700 to 900 degrees Celsius. Fully relaxed, incommensurate structures having low defect densities are obtained, where arbitrary combinations of materials can be used.