公开(公告)号：CA1142272A

公开(公告)日：1983-03-01

申请号：CA356128

申请日：1980-07-14

Applicant: IBM

Inventor： LEVER REGINALD F ,  MAUER JOHN L IV ,  MICHEL ALWIN E ,  ROTHMAN LAURA B

IPC: H01L21/76 ,  H01L21/31 ,  H01L21/312 ,  H01L21/316 ,  H01L21/762 ,  H01L21/26

Abstract: A PLANAR DEEP OXIDE ISOLATION PROCESS A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in a planar surface of a silicon semiconductor substrate is described. The process comprises the steps of forming deep wide trenches in a planar surface of the silicon substrate; forming a thin layer of silicon dioxide on the planar surface of the silicon substrate and the exposed silicon surfaces of the deep wide trenches; applying resin glass (polysiloxane) to the planar surface of the semiconductor substrate and within the deep wide trenches; spinning off at least a portion of the resin glass on the planar surface of the substrate; baking the substrate at a low temperature; exposing the resin glass contained within the deep wide trenches of the substrate to the energy of an E-beam; developing the resin glass contained on said substrate in a solvent; heating the substrate in oxygen to convert the resin glass contained within the deep wide trenches to silicon dioxide; depositing a layer of silicon dioxide to provide a planar silicon dioxide surface on the exposed surface of the substrate; and planarize exposed silicon dioxide surface to silicon of substrate. FI9-79-011