公开(公告)号：FR2292332A1

公开(公告)日：1976-06-18

申请号：FR7530734

申请日：1975-10-01

Applicant: IBM

Inventor： JOHNSON CLAUDE JR ,  KU SAN-MEI ,  LILLJA HAROLD V ,  PAN EDWARD SHIH-TO

IPC: H01L21/266 ,  G03F7/40 ,  H01L21/00 ,  H01L21/56 ,  H01L21/265 ,  G03F1/02

Abstract: An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.

公开(公告)号：CA1043667A

公开(公告)日：1978-12-05

申请号：CA238432

申请日：1975-10-27

Applicant: IBM

Inventor： JOHNSON CLAUDE JR ,  KU SAN-MEI ,  LILLJA HAROLD V ,  PAN EDWARD S

IPC: H01L21/266 ,  G03F7/40 ,  H01L21/00 ,  H01L21/56 ,  B01J17/00

Abstract: A METHOD OF ION IMPLANTATION THROUGH A PHOTORESIST MASK of the Invention An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.