公开(公告)号：US3619282A

公开(公告)日：1971-11-09

申请号：US3619282D

申请日：1968-09-27

Applicant: IBM

Inventor： MANLEY GERALD W ,  MCDERMOTT PHILIP S ,  PAN EDWARD S ,  RILEY RALPH J

IPC: C01G11/00 ,  C30B23/02 ,  C30B25/00 ,  C30B25/02 ,  C30B29/48 ,  G03B21/64 ,  H01L21/365 ,  H01L7/36 ,  C23C13/04

CPC classification number: C30B25/00 ,  C30B23/02 ,  G03B21/64 ,  Y10S148/064

Abstract: Ternary epitaxial films are grown from a gaseous mixture consisting of mercury, cadmium, and tellurium mixed with an inert or unreactive gas such as hydrogen. The mixture is heated to a temperature to prevent binary combinations and then rapidly cooled to the point of supersaturation by flowing the mixture through a thermal gradient having equithermal lines substantially parallel to the growth surface of a substrate.

公开(公告)号：US3642529A

公开(公告)日：1972-02-15

申请号：US3642529D

申请日：1969-11-17

Applicant: IBM

Inventor： LEE ROBERT E ,  MCDERMOTT PHILIP S ,  PAN EDWARD S

IPC: H01L21/363 ,  H01L31/18 ,  H01L7/36

CPC classification number: H01L31/1832 ,  H01L21/0242 ,  H01L21/02562 ,  Y10S148/063 ,  Y10S148/064 ,  Y10S148/122 ,  Y10S148/15

Abstract: An infrared sensitive photoconductive material is produced by growing a ternary compound of the formulation Hg(1 x) Cdx Te from a gaseous mixture of mercury, cadmium and tellurium onto a substrate which promotes polycrystalline growth and is chemically inert vis-a-vis the constituent gases. Suitable substrate materials are quartz, sapphire, and certain types of glass which are nonmeltable at growth temperatures of the ternary compound. The method preferably grows the polycrystalline material from a gaseous mixture of mercury, cadmium and tellurium heated to a temperature which inhibits binary combinations and then is rapidly cooled to supersaturation very close to the surface of a solid amorphous substrate material although crystalline substrates may be used provided the lattice structure in growth is incompatible with the lattice of the ternary compound.

Abstract translation: 通过将Hg（1-x）Cdx Te制剂的三元化合物从汞，镉和碲的气体混合物生长到促进多晶生长的基底上，并且相对于 组成气体 合适的基底材料是在三元化合物的生长温度下不可熔的石英，蓝宝石和某些类型的玻璃。 该方法优选地从加热到抑制二元组合的温度的汞，镉和碲的气体混合物生长多晶材料，然后迅速冷却至非常接近固体非晶衬底材料的表面的过饱和，尽管可以使用晶体衬底 生长中的晶格结构与三元化合物的晶格不相容。

公开(公告)号：CA1043667A

公开(公告)日：1978-12-05

申请号：CA238432

申请日：1975-10-27

Applicant: IBM

Inventor： JOHNSON CLAUDE JR ,  KU SAN-MEI ,  LILLJA HAROLD V ,  PAN EDWARD S

IPC: H01L21/266 ,  G03F7/40 ,  H01L21/00 ,  H01L21/56 ,  B01J17/00

Abstract: A METHOD OF ION IMPLANTATION THROUGH A PHOTORESIST MASK of the Invention An improvement in the method of ion implantation into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.