公开(公告)号：SG104330A1

公开(公告)日：2004-06-21

申请号：SG200203152

申请日：2002-05-24

Applicant: IBM

Inventor： CYRIL CABRAL JR ,  LAWRENCE ALFRED CLEVENGER ,  LOUIS HSU ,  KEITH KWONG HON WONG

IPC: C23C14/00 ,  C23C14/06 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8242 ,  H01L27/108

Abstract: A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to sputter deposit a first refractory metal-silicon-nitrogen layer on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. N2 gas is then flown into the sputtering chamber until that the concentration of N2 gas in the chamber is at least 35% to sputter deposit a second refractory metal-silicon-nitrogen layer on top of the first refractory metal-silicon-nitrogen layer. The N2 gas flow is then stopped to sputter deposit a third refractory metal-silicon-nitrogen layer on top of the second refractory metal-silicon-nitrogen layer. The multi-layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into a capacitor.