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公开(公告)号:JP2005072581A
公开(公告)日:2005-03-17
申请号:JP2004237572
申请日:2004-08-17
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor: BUFFET PATRICK H , CHIU CHARLES S , GARLETT JON D , LOUIS L SHU , SCHUH BRIAN J
CPC classification number: H01L23/642 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15174 , H01L2924/15311 , H01L2924/3025 , H01L2224/05599
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor chip package where crosstalks of adjacent signals in a carrier layer are reduced.
SOLUTION: A first pair of conductors transmitting a first signal is provided in the carrier layer. A second pair of conductors, transmitting a second signal, is provided in the vicinity of the first pair of the conductors in the layer. Here, the first and second conductors are constructed so as to allow the crosstalk between the first pair of the conductors and the second pair of the conductors to be substantially a minimum, without increasing the size of the package, the first pair of the conductors are shorter than the second pair of the conductors. Or, the first pair of the conductors and the second pair of the conductors are constructed so as to allow these conductors to be mutually effected equally. Thus, crosstalks are reduced by the chip package, without impairing the density of the mutual connections inside the package or increasing the size of the package.
COPYRIGHT: (C)2005,JPO&NCIPIAbstract translation: 要解决的问题:提供减少载体层中相邻信号的串扰的半导体芯片封装。 解决方案:在载体层中提供传输第一信号的第一对导体。 传输第二信号的第二对导体设置在该层中的第一对导体附近。 这里,第一和第二导体被构造成允许第一对导体和第二对导体之间的串扰基本上是最小的,而不增加封装的尺寸,第一对导体是 比第二对导体短。 或者,第一对导体和第二对导体被构造成允许这些导体相等地相互影响。 因此,串扰通过芯片封装减少,而不损害封装内的相互连接的密度或增加封装的尺寸。 版权所有(C)2005,JPO&NCIPI
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公开(公告)号:JP2001102453A
公开(公告)日:2001-04-13
申请号:JP2000245862
申请日:2000-08-14
Applicant: IBM
Inventor: CLEVENGER LAWRENCE A , LOUIS L SHU
IPC: H01L23/522 , H01L21/314 , H01L21/764 , H01L21/768 , H01L23/482 , H01L23/532
Abstract: PROBLEM TO BE SOLVED: To provide a structure and a process for incorporating air or another gas in a multi-layer chip as a permanent dielectric medium by supplying a CVD diamond as dielectrics in semi-sacrificial layer and in-layer dielectrics. SOLUTION: A CVD diamond is supplied as dielectrics in semi-sacrificial layer and in-layer dielectrics, and then a semi-sacrificial dielectrics is at least partially removed by isotropic oxygen etching. A disclosed one deformed example presents a eventual permanent CVD diamond sealing material for a gas dielectric medium to be confined in a chip.
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