公开(公告)号：DE1544214A1

公开(公告)日：1970-03-12

申请号：DE1544214

申请日：1966-10-13

Applicant: IBM

Inventor： LOURENS KUIPER LUBERTUS

IPC: C30B1/02 ,  C30B19/02 ,  H01L21/00 ,  H01L21/20 ,  H01L29/00

Abstract: 1,148,409. Epitaxial silicon deposition. INTERNATIONAL BUSINESS MACHINES CORP. 20 Oct., 1966 [21 Oct., 1965], No. 46895/66. Heading C1A. [Also in Divisions C7 and H1] An epitaxial Si layer is grown on a Si substrate by depositing Si and Al thereon (e.g. by evaporation of an Al or Si alloy on successive layers of Al and Si) and heating the coated base at a temperature below the Al-Si eutectic temperature to cause a crystalline Si layer to grow on the substrate surface (e.g. at 565‹ C.).

公开(公告)号：DE1564214A1

公开(公告)日：1970-01-15

申请号：DE1564214

申请日：1966-12-17

Applicant: IBM

Inventor： BARSON FRED ,  LOURENS KUIPER LUBERTUS

IPC: H01L21/00 ,  H01L23/29 ,  B01J17/00