公开(公告)号：DE3850843T2

公开(公告)日：1995-03-09

申请号：DE3850843

申请日：1988-09-13

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

公开(公告)号：DE3850843D1

公开(公告)日：1994-09-01

申请号：DE3850843

申请日：1988-09-13

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.