公开(公告)号：JP2001237370A

公开(公告)日：2001-08-31

申请号：JP2000396941

申请日：2000-12-27

Applicant: IBM

Inventor： MA WILLIAM HSIOH-LIEN ,  SCHEPIS DOMINIC JOSEPH

IPC: H01L23/52 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L27/00 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a three-dimensional multilayer element which does not require minute alignment. SOLUTION: A multilayer three-dimensional semiconductor structure includes a first semiconductor substrate and the structure 4 of a first level, which constitutes a first active element. The structure 9 of a second level, which constitutes an SOI semiconductor structure, is connected to the structure of the first level and is constitutes a second active element. The first active element is superior in heat resistance compared to the second active element in the design of the element.

公开(公告)号：DE3380837D1

公开(公告)日：1989-12-14

申请号：DE3380837

申请日：1983-05-19

Applicant: IBM

Inventor： LECHATON JOHN S ,  MALAVIYA SASHI DHAR ,  SCHEPIS DOMINIC JOSEPH ,  SRINIVASAN GURUMAKONDA RAMASAM

IPC: H01L27/00 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/306

Abstract: @ A fully isolated dielectric structure for isolating regions (14) of monocrystalline silicon from one another and method for making such structure are described. The structure uses a combination of recessed oxide isolation (18) with pairs of parallel, anisotropic etched trenches (20) which are subsequently oxidized and filled to give complete dielectric isolation for regions (14) of monocrystalline silicon. The anisotropic etching preferably etches a buried N + sublayer (12) under the monocrystalline silicon region and then the trench structure is thermally oxidized to consume the remaining N+ layer under the monocrystalline region and to fully isolate the monocrystalline silicon region between pairs of such trenches (20).

公开(公告)号：DE3850843T2

公开(公告)日：1995-03-09

申请号：DE3850843

申请日：1988-09-13

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.

公开(公告)号：DE3850843D1

公开(公告)日：1994-09-01

申请号：DE3850843

申请日：1988-09-13

Applicant: IBM

Inventor： BEYER KLAUS DIETRICH ,  LU-CHEN HSU LOUIS ,  SCHEPIS DOMINIC JOSEPH ,  SILVESTRI VICTOR JOSEPH

IPC: H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L21/20

Abstract: A method for forming epitaxial grown silicon structure having substantially defect free outer surfaces and resulting structure is provided. A silicon substrate is provided, on which an epitaxial silicon crystal is grown. The outer surface layer of the silicon epitaxially grown silicon crystal will contain defective material which is removed by oxidation of the outer layer to silicon dioxide. This removes the defect containing outer layer, creating a new outer layer which is substantially defect free.