公开(公告)号：US3713908A

公开(公告)日：1973-01-30

申请号：US3713908D

申请日：1970-05-15

Applicant: IBM

Inventor： AGUSTA B ,  LUBART E

IPC: H01L21/761 ,  H01L21/8222 ,  H01L27/082 ,  H01L7/36 ,  H01L11/00

CPC classification number: H01L27/0821 ,  H01L21/761 ,  H01L21/8222 ,  Y10S148/04 ,  Y10S148/041

Abstract: This disclosure is primarily directed to the fabrication and construction of complementary PNP-NPN semiconductor devices in a monlithic integrated form. The devices of this disclosure use an isolation-type diffused region to form at least an emitter region thereby permitting the formation of complementary devices with both emitters having a high injection efficiency.

Abstract translation: 本公开主要涉及以单体集成形式制造和构造互补的PNP-NPN半导体器件。 本公开的器件使用隔离型扩散区域形成至少一个发射极区域，从而允许形成具有高注入效率的两个发射极的互补器件。