公开(公告)号：FR2315171A1

公开(公告)日：1977-01-14

申请号：FR7614187

申请日：1976-05-06

Applicant: IBM

Inventor： CHANG AUGUSTINE W C ,  LUCARINI VINCENT J

IPC: H01L27/06 ,  H01L21/331 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/07 ,  H01L29/10 ,  H01L29/47 ,  H01L29/73 ,  H01L29/872 ,  H01L29/48

Abstract: A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N conductivity type contiguous to the collector reach-through region. The converted region is contacted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.

公开(公告)号：CA1041226A

公开(公告)日：1978-10-24

申请号：CA255056

申请日：1976-06-16

Applicant: IBM

Inventor： CHANG AUGUSTINE W ,  LUCARINI VINCENT J

IPC: H01L27/06 ,  H01L21/331 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/07 ,  H01L29/10 ,  H01L29/47 ,  H01L29/73 ,  H01L29/872 ,  H01L27/04

Abstract: A P-TYPE-EPITAXIAL-BASE TRANSISTOR WITH BASE-COLLECTOR SCHOTTKY DIODE CLAMP A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N- conductivity type contiguous to the collector reach-through region. The converted region is contracted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.