公开(公告)号：CA1102011A

公开(公告)日：1981-05-26

申请号：CA307633

申请日：1978-07-18

Applicant: IBM

Inventor： ANANTHA NARASIPUR G ,  CHANG AUGUSTINE W

IPC: H01L27/04 ,  H01L21/331 ,  H01L21/74 ,  H01L21/762 ,  H01L21/82 ,  H01L21/822 ,  H01L27/08 ,  H01L27/118 ,  H01L29/73 ,  H01L29/8605 ,  H01L29/861 ,  H01L21/86

Abstract: HIGH SHEET RESISTANCE STRUCTURE FOR HIGH DENSITY INTEGRATED CIRCUITS A high sheet resistance structure for high density integrated circuits and the method for manufacturing such structure is given. The structure includes a silicon region separated from other silicon regions by a dielectric barrier surrounding the region. A resistor of a first conductivity, for example, N type, encompasses substantially the surface of the silicon region. Electrical contacts are made to the resistor. A region highly doped of a second conductivity, for example, P-type, is located below a portion of the resistor region. This region of second conductivity is connected to the surface. Electrical contacts are made to this varied region for biasing purposes. A second region within the same isolated silicon region may be used as a resistor. This region is located below the buried region of second conductivity. Alternatively, the described resistor regions can be connected as transistors. This allows the formation of a standard masterslice which can be personalized at a late stage in the manufacturing to either resistors or transistors in all or a portion of the standard regions.

公开(公告)号：CA1041226A

公开(公告)日：1978-10-24

申请号：CA255056

申请日：1976-06-16

Applicant: IBM

Inventor： CHANG AUGUSTINE W ,  LUCARINI VINCENT J

IPC: H01L27/06 ,  H01L21/331 ,  H01L21/74 ,  H01L21/8222 ,  H01L27/07 ,  H01L29/10 ,  H01L29/47 ,  H01L29/73 ,  H01L29/872 ,  H01L27/04

Abstract: A P-TYPE-EPITAXIAL-BASE TRANSISTOR WITH BASE-COLLECTOR SCHOTTKY DIODE CLAMP A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N- conductivity type contiguous to the collector reach-through region. The converted region is contracted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.