公开(公告)号：JPH02234435A

公开(公告)日：1990-09-17

申请号：JP727590

申请日：1990-01-18

Applicant: IBM

Inventor： GARII BERA BURONNAA ,  DEBUIDO RUIISU HAARAME ,  MAAKU EDOUIN JIYOOSUTO ,  RONARUDO NOOMAN SHIYURUTSU

IPC: H01L29/73 ,  H01L21/285 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732

Abstract: PURPOSE: To obtain a self-aligned high-speed bipolar transistor by a method wherein a second insulating region is arranged in contact with an emitter region and an extrinsic region under a fist insulating region, and an intrinsic base region is provided in the second insulating region surrounded with the emitter region and the extrinsic region. CONSTITUTION: An intrinsic base is formed as a collector on a doped silicon substrate, and an emitter mesa structure provided with a nitride side wall is formed on the intrinsic base. Then, an field insulating region is formed, and an extrinsic base region is formed in the field insulating region fully surrounding an emitter stack. An extrinsic base polysilicon is buried in this well, an insulating dielectric body is grown through thermal oxidation, and arsenic is diffused into a single crystal silicon from the emitter silicon to form an emitter. By this setup, a self-aligned high-speed bipolar transistor can be obtained.