公开(公告)号：JPH05129249A

公开(公告)日：1993-05-25

申请号：JP9516892

申请日：1992-04-15

Applicant: IBM

Inventor： MAAKU JIEFUREI SHIYAATO ,  ARUFURETSUDO BUIIBETSUKU

IPC: H01L21/302 ,  C08J7/12 ,  C23C18/20 ,  C23C18/22 ,  H01L21/3065 ,  H01L21/324 ,  H05H1/00 ,  H05K3/18 ,  H05K3/38

Abstract: PURPOSE: To overcome oxidation caused in an exposure polymer material due to such a dry process as an etching method, using an oxygen atmosphere. CONSTITUTION: A polymer base is exposed to a plasma containing oxygen and then is exposed to a reducing atmosphere at approximately 120 deg.C or higher. The reduction treatment inverts the chemical effect of the polymer surface due to the operation of an oxidation plasma, thus reproducing an original electrical activity on the surface of a certain type of polymer.