公开(公告)号：MY109375A

公开(公告)日：1997-01-31

申请号：MYPI19912268

申请日：1991-12-06

Applicant: IBM

Inventor： MUELLER CARL ALEXANDER ,  BEDNORZ JOHANNES GEORG ,  MANNHART JOCHEN DIETER

IPC: B05D5/12 ,  H01B12/00 ,  H01L39/22 ,  H01L21/265 ,  H01L21/336 ,  H01L39/14 ,  H01L39/24

Abstract: THIS FIELD-EFFECT TRANSISTOR COMPRISES A CONDUCTIVE SUBSTRATE (2) SERVING AS THE GATE ELECTRODE, AN INSULATING BARRIER LAYER (3), AND A SUPERCONDUCTING CHANNEL LAYER (1) ON TOP OF THE BARRIER LAYER (3).THE SUPERCONDUCTOR LAYER (1) CARRIES A PAIR OF MUTUALLY SPACED ELECTRODES (4, 5) FORMING SOURCE AND DRAIN, RESPECTIVELY. THE SUBSTRATE IS PROVIDED WITH AN APPROPRIATE GATE CONTACT (6).THE SUBSTRATE (2) CONSISTS OF A MATERIAL BELONGING TO THE SAME CRYSTALLOGRAPHIC FAMILY AS THE BARRIER LAYER (3). IN A PREFERRED EMBODIMENT, THE SUBSTRATE (2) IS NIOBIUM-DOPED STRONTIUM TITANATE, THE BARRIER LAYER (3) IS UNDOPED STRONTIUM TITANATE, AND THE SUPERCONDUCTOR (1) IS A THIN FILM OF A MATERIAL HAVING A LATTICE CONSTANT AT LEAST APPROXIMATELY SIMILAR TO THE ONE OF THE MATERIALS OF THE SUBSTRATE (2) AND BARRIER (3) LAYERS. A PREFERRED MATERIAL OF THIS TYPE IS YBA2CU3O7-, WHERE 0