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    LOW TEMPERATURE TUNNELING TRANSISTOR
    3.
    发明专利
    LOW TEMPERATURE TUNNELING TRANSISTOR 未知

    公开(公告)号：DE3373167D1

    公开(公告)日：1987-09-24

    申请号：DE3373167

    申请日：1983-12-28

    Applicant: IBM

    Inventor： GRAF VOLKER ,  GUERET PIERRE LEOPOLD ,  MUELLER CARL ALEXANDER

    IPC: H01L29/15 ,  H01L39/22

    Abstract: The transistor comprises two electrodes, source (12) and drain (13), with a semiconductor tunnel channel (11) arranged therebetween. A gate (14) for applying control signals is coupled to the channel. The semiconductor, at low temperatures, behaves like an insulator with a low barrier (some meV) through which charge carriers can tunnel under the influence of an applied drain voltage. The tunnel current can be controlled by a gate voltage VG which modifies the barrier height between source and drain thereby changing the tunnel probability.

    8.
    发明专利
    未知

    公开(公告)号：DE3876228T2

    公开(公告)日：1993-06-03

    申请号：DE3876228

    申请日：1988-01-15

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

    IPC: H01L39/22 ,  H01L39/14

    Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

    9.
    发明专利
    未知

    公开(公告)号：DE3876228D1

    公开(公告)日：1993-01-07

    申请号：DE3876228

    申请日：1988-01-15

    Applicant: IBM

    Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

    IPC: H01L39/22 ,  H01L39/14

    Abstract: The field-effect structure comprises a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high- Tc metal-oxide superconductor, e.g. YBaCuO, having a carrier density of about 10 power 21/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched betweeen "zero" (undepleted, superconducting) and "very high" (depleted).

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