SEMICONDUCTOR PACKAGE
    1.
    发明专利

    公开(公告)号:JPH10223793A

    公开(公告)日:1998-08-21

    申请号:JP1290798

    申请日:1998-01-26

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To bond a cap having low thermal conductivity to a board having high thermal conductivity by using a thermal interposer conforming to the coefficient of thermal expansion of the board having high thermal conductivity. SOLUTION: A sealing band or ring 19 is formed, in the form of a band or a frame, on the outer circumference of an AIN board 10. A first high thermal conductivity material 13 is formed on the sealing band or ring 19 and a thermal interposer core 23 is formed on a first solder/brazing filler metal layer 13. The thermal interposer 23 is made of an alloy having coefficient of thermal expansion extremely close to that of the AIN board 10 and has relatively low thermal conductivity. Furthermore, a second high thermal conductivity material layer 15, e.g. a solder/brazing filler metal layer, is formed on the thermal interposer 23. According to the structure, heat dissipation to the aluminum nitride board 10 is reduced resulting in perfect fusion of solder/brazing filler metal and continuous wetting of the board sealing ring 19.

    METHOD FOR BONDING CAP HAVING LOW THERMAL CONDUCTIVITY TO BOARD HAVING HIGH THERMAL CONDUCTIVITY

    公开(公告)号:JPH10223792A

    公开(公告)日:1998-08-21

    申请号:JP1252998

    申请日:1998-01-26

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To bond a cap having low thermal conductivity to a substrate having high thermal conductivity by using a thermal interposer conforming to the coefficient of thermal expansion of the substrate having high thermal conductivity. SOLUTION: A sealing band or ring 19 is formed, in the form of a band or a frame, on the outer circumference of an AIN board 10 having high thermal conductivity. A first high thermal conductivity material 13 is formed on the sealing band or ring 19 and a thermal interposer core 23 is formed on a first solder/brazing filler metal layer. The thermal interposer 23 is made of an alloy having coefficient of thermal expansion extremely close to that of the AIN board 10 and has relatively low thermal conductivity. When such a thermal interposer 23 is employed, dissipation of heat to the aluminum nitride board 10 is reduced significantly resulting in perfect fusion of solder/brazing filler metal layer and continuous wetting of the substrate sealing ring 19.

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