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    SEMICONDUCTOR PACKAGE
    1.
    发明专利
    SEMICONDUCTOR PACKAGE 失效

    公开(公告)号：JPH10223793A

    公开(公告)日：1998-08-21

    申请号：JP1290798

    申请日：1998-01-26

    Applicant: IBM

    Inventor： LAERTIS ECONOMIKOS ,  HERRON LESTER W ,  MARIO J INTARANTO

    IPC: H01L23/02 ,  H01L23/10

    Abstract: PROBLEM TO BE SOLVED: To bond a cap having low thermal conductivity to a board having high thermal conductivity by using a thermal interposer conforming to the coefficient of thermal expansion of the board having high thermal conductivity. SOLUTION: A sealing band or ring 19 is formed, in the form of a band or a frame, on the outer circumference of an AIN board 10. A first high thermal conductivity material 13 is formed on the sealing band or ring 19 and a thermal interposer core 23 is formed on a first solder/brazing filler metal layer 13. The thermal interposer 23 is made of an alloy having coefficient of thermal expansion extremely close to that of the AIN board 10 and has relatively low thermal conductivity. Furthermore, a second high thermal conductivity material layer 15, e.g. a solder/brazing filler metal layer, is formed on the thermal interposer 23. According to the structure, heat dissipation to the aluminum nitride board 10 is reduced resulting in perfect fusion of solder/brazing filler metal and continuous wetting of the board sealing ring 19.

    METHOD FOR BONDING CAP HAVING LOW THERMAL CONDUCTIVITY TO BOARD HAVING HIGH THERMAL CONDUCTIVITY
    2.
    发明专利
    METHOD FOR BONDING CAP HAVING LOW THERMAL CONDUCTIVITY TO BOARD HAVING HIGH THERMAL CONDUCTIVITY 失效

    公开(公告)号：JPH10223792A

    公开(公告)日：1998-08-21

    申请号：JP1252998

    申请日：1998-01-26

    Applicant: IBM

    Inventor： MARIO J INTARANTO ,  LAERTIS ECONOMIKOS ,  HERRON LESTER W

    IPC: H01L23/02 ,  H01L23/10

    Abstract: PROBLEM TO BE SOLVED: To bond a cap having low thermal conductivity to a substrate having high thermal conductivity by using a thermal interposer conforming to the coefficient of thermal expansion of the substrate having high thermal conductivity. SOLUTION: A sealing band or ring 19 is formed, in the form of a band or a frame, on the outer circumference of an AIN board 10 having high thermal conductivity. A first high thermal conductivity material 13 is formed on the sealing band or ring 19 and a thermal interposer core 23 is formed on a first solder/brazing filler metal layer. The thermal interposer 23 is made of an alloy having coefficient of thermal expansion extremely close to that of the AIN board 10 and has relatively low thermal conductivity. When such a thermal interposer 23 is employed, dissipation of heat to the aluminum nitride board 10 is reduced significantly resulting in perfect fusion of solder/brazing filler metal layer and continuous wetting of the substrate sealing ring 19.

    DIFFUSION ISOLATION LAYER FOR MASKLESS CLADDING PROCESS
    6.
    发明专利
    DIFFUSION ISOLATION LAYER FOR MASKLESS CLADDING PROCESS 未知

    公开(公告)号：CA1312405C

    公开(公告)日：1993-01-05

    申请号：CA615552

    申请日：1989-11-07

    Applicant: IBM

    Inventor： HERRON LESTER W ,  KUMAR ANANDA H ,  NUFER ROBERT W

    IPC: H01L21/48

    Abstract: In a maskless metal cladding process for plating an existing metallurgical pattern, a protective layer is utilized to isolate those areas of underlying metallurgy on which additional metal plating is not desired. The layer acts as an isolation barrier to protect the underlying metallurgy from deposition and subsequent diffusion of the heavy metal overlay. The composition of the protective layer is selected as one having sufficient mechanical integrity to withstand process handling and support the gold overlay and having the thermal integrity to withstand the high temperatures reached during metal sputtering and diffusion processes. The isolation barrier layer has an organic component as a binder which thermally decomposes, either in a heating step before metal deposition or during the diffusion cycle, leaving no carbonaceous residue but leaving an inert, inorganic standoff to support the metal. After diffusion of the metal, the remaining inorganic standoff layer, overlying metal and any undiffused metal remaining on the non-patterned substrate is easily removed by a standard technique, such as ultrasonics. FI9-84-010B

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