公开(公告)号：JPH1117001A

公开(公告)日：1999-01-22

申请号：JP16022198

申请日：1998-06-09

Applicant: IBM

Inventor： MARK A JEISO ,  MANDELMAN JACK A ,  TONTI WILLIAM R ,  WORDEMAN MATTHEW R

IPC: H01L21/20 ,  H01L21/76 ,  H01L21/762 ,  H01L21/84 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide an SOI(silicon on Insulator)/bulk hybrid semiconductor substrate. SOLUTION: A semiconductor device has SOI regions 120 and bulk regions 122. In single crystal semiconductor regions, conductive spacers 124 are provided to electrically connect the SOI regions to the ground, thereby overcoming the floating body effect. Insulative spacers 126 are formed on the conductive spacers 124 to electrically separate the SOI regions 120 from the bulk regions 122. In manufacturing process of these regions, a sacrificial polishing layer is deposited to the epitaxially grown single crystal bulk regions, and there is no need to selectively grow.