公开(公告)号：EP0771022A3

公开(公告)日：1998-08-12

申请号：EP96306961

申请日：1996-09-25

Applicant: IBM

Inventor： BRABAZON TERRY J ,  EL-KAREH BADIH ,  MARTIN STUART R ,  RUTTEN MATTHEW JEREMY ,  KAANTA CARTER WELLING

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L21/3205

CPC classification number: H01L28/40 ,  H01L21/76895

Abstract: A precision analog metal-metal capacitor is fabricated by forming a first capacitor plate (16) in an insulation layer (12) by forming a trench therein, depositing metal within the trench and planarizing the device. A thin dielectric layer (18) is then deposited and patterned over the first capacitor plate (16). A second insulator (20) is then deposited over the device and discrete openings etched therein to expose the insulation layer (18) and first metal plate (16). Metal is deposited within the openings and planarized, thereby forming a contact (26) to the first metal plate (16) and the second metal plate (24) of the capacitor.

公开(公告)号：CA1257154A

公开(公告)日：1989-07-11

申请号：CA497009

申请日：1985-12-05

Applicant: IBM

Inventor： ELIAS KENNETH L ,  MARTIN STUART R ,  SLATTERY WILLIAM J

IPC: C04B41/87 ,  C04B41/45 ,  H05K1/03 ,  H05K3/00 ,  B05D3/06 ,  B32B18/00

Abstract: PLANARIZED CERAMIC SUBSTRATES A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.