公开(公告)号：JP2006060227A

公开(公告)日：2006-03-02

申请号：JP2005238138

申请日：2005-08-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MARK C HEIKY ,  MASTERS MARK E ,  PASTEL LEAH M P ,  VALLETT DAVID P

IPC: H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/088 ,  H01L29/06

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  G01R31/2884 ,  H01L27/088 ,  H01L27/286 ,  H01L29/0673 ,  H01L29/78 ,  H01L51/0048 ,  H01L51/0512 ,  Y10S977/761 ,  Y10S977/762 ,  Y10S977/765

Abstract: PROBLEM TO BE SOLVED: To provide a new structure and a new method for monitoring an operation of an acting integrated circuit in operation. SOLUTION: This invention relates to a method and a structure of an integrated circuit provided with a first transistor and an embeded carbon nanotube field effect transistor (CNT FET) which is adjacent to and smaller than the first transistor. The CNT FET is used for sensing a signal containing any of a temperature signal, a voltage signal, a current signal, an electric field signal and a magnetic field signal from the first transistor. Furthermore, the CNT FET is used for measuring a stress and a distortion in the integrated circuit containing any of a mechanical stress and a mechanical distortion as well as a thermal stress and a thermal distortion. Furthermore, the CNT FET is used for detecting a defective circuit in the integrated circuit. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于监视操作中的动作集成电路的操作的新结构和新方法。 解决方案：本发明涉及一种集成电路的方法和结构，该集成电路设置有与第一晶体管相邻且小于第一晶体管的第一晶体管和嵌入式碳纳米管场效应晶体管（CNT FET）。 CNT FET用于感测包含来自第一晶体管的任何温度信号，电压信号，电流信号，电场信号和磁场信号的信号。 此外，CNT FET用于测量包含任何机械应力和机械变形以及热应力和热变形的集成电路中的应力和变形。 此外，CNT FET用于检测集成电路中的故障电路。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006013504A

公开(公告)日：2006-01-12

申请号：JP2005182260

申请日：2005-06-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK C ,  HORAK DAVID V ,  KOBURGER CHARLES W III ,  MASTERS MARK E ,  MITCHELL PETER H

IPC: H01L27/10 ,  G11C11/00 ,  G11C13/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/06 ,  H01L29/786

CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/0033 ,  G11C2213/17 ,  H01L27/108 ,  H01L27/10861 ,  H01L27/10873 ,  Y10S977/742

Abstract: PROBLEM TO BE SOLVED: To provide a gain cell for a memory circuit, a memory circuit comprising multiple gain cells, and a method of producing such gain cells and memory circuits. SOLUTION: A memory gain cell 64 includes a storage capacitor 38, a write device which is electrically coupled to the storage capacitor for charging and discharging the storage capacitor, and a read device. The read device includes one or more semiconducting carbon nanotubes 50 each of which is electrically coupled between a source and a drain. A portion of each semiconducting carbon nanotube is gated by a read gate 60 and the storage capacitor, thereby regulating a current flowing through each semiconducting carbon nanotube from the source to the drain. The current is proportional to the electrical charge stored by the storage capacitor. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于存储器电路的增益单元，包括多个增益单元的存储器电路，以及产生这种增益单元和存储器电路的方法。 存储增益单元64包括存储电容器38，电耦合到用于对存储电容器充电和放电的存储电容器的写装置和读装置。 读取装置包括一个或多个半导体碳纳米管50，每个碳纳米管电耦合在源极和漏极之间。 每个半导体碳纳米管的一部分由读门60和存储电容器门控，从而调节从源极到漏极流过每个半导体碳纳米管的电流。 电流与存储电容器存储的电荷成比例。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：SG65720A1

公开(公告)日：1999-06-22

申请号：SG1997005154

申请日：1997-12-08

Applicant: IBM

Inventor： MASTERS MARK E ,  VALLETT DAVID P

IPC: H01L23/525 ,  H01L23/528 ,  H01L23/48

Abstract: An integrated distribution wiring system for a semiconductor substrate having a number of devices. The distribution system includes additional stripes which are arranged parallel to existing rails carrying power or signals to the devices. These stripes being separable from the rails may be used to make engineering changes such as repairs or modifications of the circuits in the devices or characterizing or diagnosing the devices.