公开(公告)号：US3788890A

公开(公告)日：1974-01-29

申请号：US3788890D

申请日：1972-03-03

Applicant: IBM

Inventor： MADER S ,  MATTHEWS J

IPC: C30B25/18 ,  C30B13/34 ,  C30B15/36 ,  H01L21/205 ,  H01L21/208 ,  B44C1/18 ,  C23C11/00

CPC classification number: C30B13/34 ,  C30B15/36 ,  Y10S117/902 ,  Y10S148/025 ,  Y10S148/115

Abstract: DISCLOSED IS A METHOD FOR GROWING CRYSTALS UPON NONINDENTICAL SUBSTRATE OR SEED CRYSTAL IN WHICH THE GROWN CRYSTALS HAVE A HIGH DEGREE OF CRYSTAL PERFECTION. MORE PARTICULARLY, THE INVENTION IN A METHOD OF SELECTING SUITABLE SEED OR SUBSTRATE CRYSTALS WHICH PERMIT THE GROWTH OF DISLOCATION-FREE CRYSTALS, A METHOD OF SELECTING THEOPTIMUM PLANE ON WHICH TO GROW THE CRYSTALS AS WELL AS APPROXIMATING A LARGE NUMBER OF SUITABLE PLANES, AND THEN GROWING THE CRYSTAL TO A MINIMUM THICKNESS AT WHICH ALL DISLOCATIONS ARE REMOVED FROM THE GROWING CRYSTAL. THIS INVENTION IS PARTICULARLY APPLICABLE TO THE GROWTH OF DISLOCATION-FREE THIN FILM CRYSTALS SINCE THE MINIMUM THICKNESS CAN BE READILY CALCULATED AND IS OFTEN QUITE SMALL.

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