Method of preparing dislocation-free crystals
    1.
    发明授权
    Method of preparing dislocation-free crystals 失效
    制备无色晶体的方法

    公开(公告)号:US3788890A

    公开(公告)日:1974-01-29

    申请号:US3788890D

    申请日:1972-03-03

    Applicant: IBM

    Inventor: MADER S MATTHEWS J

    Abstract: DISCLOSED IS A METHOD FOR GROWING CRYSTALS UPON NONINDENTICAL SUBSTRATE OR SEED CRYSTAL IN WHICH THE GROWN CRYSTALS HAVE A HIGH DEGREE OF CRYSTAL PERFECTION. MORE PARTICULARLY, THE INVENTION IN A METHOD OF SELECTING SUITABLE SEED OR SUBSTRATE CRYSTALS WHICH PERMIT THE GROWTH OF DISLOCATION-FREE CRYSTALS, A METHOD OF SELECTING THEOPTIMUM PLANE ON WHICH TO GROW THE CRYSTALS AS WELL AS APPROXIMATING A LARGE NUMBER OF SUITABLE PLANES, AND THEN GROWING THE CRYSTAL TO A MINIMUM THICKNESS AT WHICH ALL DISLOCATIONS ARE REMOVED FROM THE GROWING CRYSTAL. THIS INVENTION IS PARTICULARLY APPLICABLE TO THE GROWTH OF DISLOCATION-FREE THIN FILM CRYSTALS SINCE THE MINIMUM THICKNESS CAN BE READILY CALCULATED AND IS OFTEN QUITE SMALL.

    D R A W I N G

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