公开(公告)号：DE3275964D1

公开(公告)日：1987-05-07

申请号：DE3275964

申请日：1982-04-27

Applicant: IBM

Inventor： MARINACE JOHN CARTER ,  MCGIBBON RALPH CHARLES

IPC: G03F7/09 ,  G03F7/11 ,  H01L21/312 ,  G03F7/02

公开(公告)号：DE1192747B

公开(公告)日：1965-05-13

申请号：DEJ0020746

申请日：1961-10-30

Applicant: IBM

Inventor： MCGIBBON RALPH CHARLES

IPC: H01L21/00 ,  H01L21/18 ,  H01L29/00

Abstract: 976,294. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 2, 1961 [Nov. 3, 1960], No. 39212/61. Drawings to Specification. Heading H1K. A tunnel diode consists of a body of N-type conductivity indium antimonide having an alloyed junction of pure indium. The indiumantimonide is heavily doped with selenium to make it degenerate N-type and then brought into contact with the pure indium and heated to 400‹ C. for five minutes. In the alloying process the indium imparts P-type conductivity to the recrystallized junction, the narrow separation layer between the P- and N-types being the high resistance layer of intrinsic type through which tunnelling takes place. The indium serves as an ohmic contact to the recrystallized region.