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    High frequency bulk semiconductor amplifiers and oscillators
    1.
    发明授权
    High frequency bulk semiconductor amplifiers and oscillators 失效
    高频散射半导体放大器和振荡器

    公开(公告)号：US3602841A

    公开(公告)日：1971-08-31

    申请号：US3602841D

    申请日：1970-06-18

    Applicant: IBM

    Inventor： MCGRODDY JAMES C

    IPC: H01L47/02 ,  H03B9/12 ,  H03F3/10 ,  H03B5/12

    CPC classification number: H03B9/12 ,  H01L47/026 ,  H03F3/10

    Abstract: Stable high frequency oscillating and amplifying devices are prepared from bulk semiconductor materials which have a positive differential conductivity at relatively low frequencies and a negative differential conductivity in some ranges of relatively high frequencies. The materials used are further characterized in that there is charge carrier transfer or population redistribution from a lower mobility band or low mobility impurity level to a higher mobility band, an effect opposite to that of Gunn effect devices. Materials suitable for the devices of this invention may be selected from a representative group of suitably doped III-V compounds, for example, N-type InSb, N-type alloys of the form InxGa1 xAs, where 0.53

    Three-terminal bulk negative resistance device operable in oscillatory and bistable modes
    2.
    发明授权
    Three-terminal bulk negative resistance device operable in oscillatory and bistable modes 失效
    三端反应电阻器件在振荡和双向模式下运行

    公开(公告)号：US3588736A

    公开(公告)日：1971-06-28

    申请号：US3588736D

    申请日：1969-06-30

    Applicant: IBM

    Inventor： MCGRODDY JAMES C

    IPC: H03B9/12 ,  H03B7/00 ,  H03K3/31

    CPC classification number: H03B9/12

    Abstract: THE NEGATIVE RESISTANCE CIRCUIT INCLUDES A BODY OF N-TYPE GALLIUM ARSENIDE HAVING AN EXCESS CARRIER CONCENTRATION (NO) AND LENGTH (L) SUCH THAT THE BODY EXHIBITS BULK NEGATIVE DIFFERENTIAL CONDUCTIVITY BUT DOES NOT INHERENTLY PRODUCE TRAVELING HIGH FIELD DOMAINS. A P-TYPE CONTACT IS MADE BETWEEN THE FIRST REGION AND CATHODE TO FORM A SECOND REGION OF HIGH RESISTANCE. THE P CONTACT IS SELECTIVELY BIASED TO CAUSE A HIGH FIELD TO SHIFT BETWEEN THE SECOND REGION AND A THIRD REGION BETWEEN THE FIRST REGION AND ANODE. THE SHIFTING BETWEEN REGIONS IS CONTROLLED BY THE BIAS TO PRODUCE EITHER HIGH FREQUENCY OSCILLATIONS OR BISTABILITY.

    4.
    发明专利
    未知

    公开(公告)号：FR2376446A1

    公开(公告)日：1978-07-28

    申请号：FR7736209

    申请日：1977-11-24

    Applicant: IBM

    Inventor： MCGRODDY JAMES C ,  SCOTT BRUCE A

    IPC: H01J17/04 ,  C23C18/20 ,  C25D5/02 ,  G03C1/675 ,  G03C1/73 ,  G03C5/58 ,  G09F9/30 ,  H01B13/00 ,  H05K3/10 ,  H05K3/18 ,  G03F1/02

    Abstract: 1521860 Electro-deposited patterns INTERNATIONAL BUSINESS MACHINES CORP 16 Nov 1977 [30 Dec 1976] 47675/77 Heading C7B Electrically conductive metal films are electrodeposited on a substrate in a predetermined pattern by first photochemically depositing on the substrate an organic #-electron donor halide salt, e.g.: followed by metal electro-deposition, the electrodeposition being accompanied by the simultaneous removal of the organic salt.

    5.
    发明专利
    未知

    公开(公告)号：FR2312872A1

    公开(公告)日：1976-12-24

    申请号：FR7610162

    申请日：1976-04-01

    Applicant: IBM

    Inventor： MCGRODDY JAMES C

    IPC: H01S5/00 ,  H01S5/18 ,  H01S5/42 ,  H01S3/02 ,  H01S3/19

    Abstract: An injection laser, whose sides are chemically etched to produce facing 45 DEG mirrors, can be made to emit lasing light in the same direction as current going through the p-n junction. A two dimensional array of lasers is produced wherein the location of each laser is uniformly spaced from an adjacent laser.

    INTEGRATED PHOTOELECTRICAL CONVERSION
    6.
    发明专利
    INTEGRATED PHOTOELECTRICAL CONVERSION 未知

    公开(公告)号：CA1088190A

    公开(公告)日：1980-10-21

    申请号：CA288213

    申请日：1977-10-05

    Applicant: IBM

    Inventor： MCGRODDY JAMES C

    IPC: H01L27/14 ,  H01L27/142 ,  H01L31/052 ,  H01L31/04

    Abstract: INTEGRATED PHOTOELECTRICAL CONVERSION Photoelectric conversion cells, wherein the individual cells are thermally connected to and electrically isolated from an electrically conducting heat sink, may be connected in integrated array form by forming individual planar devices and interconnecting in situ on an electrically insulating substrate which is thermally bonded to the heat sink.

    Photoelectric converter having integral electrical insulation - combining good electrical isolation with max. thermal contact
    8.
    发明专利
    Photoelectric converter having integral electrical insulation - combining good electrical isolation with max. thermal contact 未知

    公开(公告)号：FR2370362A1

    公开(公告)日：1978-06-02

    申请号：FR7728526

    申请日：1977-09-14

    Applicant: IBM

    Inventor： MCGRODDY JAMES C

    IPC: H01L27/14 ,  H01L27/142 ,  H01L31/052 ,  H01L31/04

    Abstract: A photoresponsive device comprises (a) a device body having two opposed parallel major surfaces, (b) a photoresponsive semiconductor active region along a first major surface, (c) a region of electrically insulating material epitaxial with the active regions, separating it from the second major surface, and (d) a heat sink bonded to the second major surface. Used esp. for photoelectric conversion cell arrays. The integral insulator may be much smaller than separate insulators allowing max. thermal conduction, and full use can be made of the accurate control of diffusion and vapour deposition techniques.

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