公开(公告)号：DE3171523D1

公开(公告)日：1985-09-05

申请号：DE3171523

申请日：1981-01-23

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CHOU NED J ,  FEDER RALPH ,  FOWLER ALAN B ,  VANVECHTEN JAMES A

IPC: G03F1/20 ,  H01L21/203 ,  H01L21/266 ,  C30B23/04 ,  G03F1/00

Abstract: A high aspect ratio collimating mask (2) for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by localized ion implantation (10) during epitaxial growth (7) of a crystal wafer (1). In apparatus for use of the collimating mask (2), the crystal wafer (1) is held perpendicular to the plurality of discrete parallel ion beams (10) emitted through the collimating mask (2).

公开(公告)号：FR2368362A1

公开(公告)日：1978-05-19

申请号：FR7727021

申请日：1977-09-01

Applicant: IBM

Inventor： MCGRODDY JAMES C ,  VANVECHTEN JAMES A

IPC: G03G15/05 ,  B41J2/005 ,  B41J2/01 ,  B41J2/05 ,  B41J2/44 ,  B41J3/46 ,  B41M5/26 ,  G03G15/04 ,  G03G15/22 ,  G09G3/02 ,  B41J3/04