-
公开(公告)号:BR8002526A
公开(公告)日:1980-12-30
申请号:BR8002526
申请日:1980-04-24
Applicant: IBM
Inventor: ROMANKIW L , MELCHER R , GUTFELD R
IPC: H05K3/06 , B23K26/12 , C23F1/02 , C23F4/00 , C25F3/14 , H01L21/306 , H01L21/3213 , H05K3/22 , B23P1/04
Abstract: A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the ething rate in the case of electrochemical machining by a factor of 103 to 104. Such enhancement is sufficient to make masking unnecessary.
-
公开(公告)号:ZA8001244B
公开(公告)日:1980-12-31
申请号:ZA8001244
申请日:1980-03-04
Applicant: IBM
Inventor: MELCHER R , ROMANKIW L , VON GUTFELD R
IPC: H05K3/06 , B23K26/12 , C23F1/02 , C23F4/00 , C25F3/14 , H01L21/306 , H01L21/3213 , H05K3/22 , C25B
CPC classification number: H01L21/32134 , C23F1/02 , C25F3/14
-
公开(公告)号:ZA801244B
公开(公告)日:1980-12-31
申请号:ZA801244
申请日:1980-03-04
Applicant: IBM
Inventor: MELCHER R , ROMANKIW L , VON GUTFELD R
IPC: H05K3/06 , B23K26/12 , C23F1/02 , C23F4/00 , C25F3/14 , H01L21/306 , H01L21/3213 , H05K3/22 , C25B
Abstract: A method for high resolution maskless chemical and electrochemical machining is described. Preferential etching results from exposing those regions where machining is sought to an energy beam. Such exposures can increase the ething rate in the case of electrochemical machining by a factor of 103 to 104. Such enhancement is sufficient to make masking unnecessary.
-
公开(公告)号:BR8002800A
公开(公告)日:1980-12-16
申请号:BR8002800
申请日:1980-05-06
Applicant: IBM
IPC: C25D5/00 , C25D5/02 , H01L21/288 , H01L21/768 , H05K3/24 , C25D5/18
Abstract: A method for high resolution maskless electroplating is described. Preferential plating results from exposing those regions where enhanced plating is sought to a collimated energy beam. Such exposure can produce an enhancement in the plating rate of 103, which is sufficient to eliminate the necessity of masking the surface.
-
-
-