公开(公告)号：US3508118A

公开(公告)日：1970-04-21

申请号：US3508118D

申请日：1969-01-24

Applicant: IBM

Inventor： MERRIN SEYMOUR ,  SILVER MELVYN D ,  SUDEN EDWARD M

IPC: B23K35/00 ,  H01L21/00 ,  H01L21/60 ,  H05K3/34 ,  H01L19/00

CPC classification number: C03C17/06 ,  B23K35/001 ,  C03C2218/33 ,  H01L21/00 ,  H01L24/81 ,  H01L2224/10175 ,  H01L2224/13111 ,  H01L2224/81801 ,  H01L2224/81907 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/19043 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/0175 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2201/09745 ,  H05K2203/0315 ,  H05K2203/048 ,  Y02P70/613 ,  Y10S228/903 ,  Y10T29/49144

公开(公告)号：US3436818A

公开(公告)日：1969-04-08

申请号：US3436818D

申请日：1965-12-13

Applicant: IBM

Inventor： MERRIN SEYMOUR ,  SILVER MELVYN D ,  SUDEN EDWARD M

IPC: B23K35/00 ,  H01L21/00 ,  H01L21/60 ,  H05K3/34 ,  H05K3/30 ,  B23K31/02

CPC classification number: C03C17/06 ,  B23K35/001 ,  C03C2218/33 ,  H01L21/00 ,  H01L24/81 ,  H01L2224/10175 ,  H01L2224/13111 ,  H01L2224/81801 ,  H01L2224/81907 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/19043 ,  H05K3/3436 ,  H05K3/3452 ,  H05K2201/0175 ,  H05K2201/09472 ,  H05K2201/09509 ,  H05K2201/09745 ,  H05K2203/0315 ,  H05K2203/048 ,  Y02P70/613 ,  Y10S228/903 ,  Y10T29/49144

公开(公告)号：CA812998A

公开(公告)日：1969-05-13

申请号：CA812998D

Applicant: IBM

Inventor： SILVER MELVYN D ,  SUDEN EDWARD M ,  MERRIN SEYMOUR

公开(公告)号：DE1496545A1

公开(公告)日：1969-07-03

申请号：DE1496545

申请日：1965-01-23

Applicant: IBM

Inventor： MARIE HOOGENDOORN HELEN ,  MERRIN SEYMOUR

IPC: C03C3/072 ,  C03C3/102 ,  C03C3/108 ,  C03C4/00 ,  C03C17/10 ,  C23C8/80 ,  H01L21/00 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00

Abstract: A glass consists essentially, in moles per cent of: PbO, 23-50; Al2O3, 0-19; B2O3, 6-18 SiO2, 33-65; 0.1-1.0 mole per cent of one of Nb2O5, ZrO2, TiO2 and Ta2O5. The glass may have coefficient of linear expansion of (50-70) x 10-7/ DEG C. The glass may be applied to a semi-conductor device 10 comprising Si wafer with PN junctions 14 and 15, to the surface of which is applied an optional continuous oxide layer 16, e.g. of silicon oxide and a layer of the glass 17 chemically bonded to layer 16. Layer 16 may be formed: by heating the body to 900-1400 DEG C. in an atmosphere of air saturated with water vapour or in an atmosphere of steam; by electrochemical treatment; or by thermal decomposition of a siloxane compound. Glass layer 17 may be applied by spraying, settling on silk-screening finely divided glass particles, followed by firing. One method of application of the glass particles comprises centrifuging the body in a colloidal suspension of glass particles of mean size, e.g. 0.1-0.7 m in an organic fluid of dielectric constant 3.4-20.7. The glass may be fused at 500-950 DEG C. Holes may subsequently be etched, e.g. by HF, through layers 17 and 16 to expose portions of the semi-conductor regions 11, 12 and 13, to which ohmic contacts 18, 19 and 20 may be applied by evaporation of a metal. Specifications 992,044 and 994,814 are referred to.