公开(公告)号：JP2002049152A

公开(公告)日：2002-02-15

申请号：JP2001164184

申请日：2001-05-31

Applicant: IBM

Inventor： AFZALI-ARKDAKANI ALI ,  TORISHIA LIN BREEN ,  GELORME JEFFREY D ,  DAVID BRIAN MITSUI ,  MICHAEL JOSEPH LUX

IPC: G03F7/038 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a high sensitivity and high resolution photoresist composition developable with an organic solvent for use in E(electron) beam lithography. SOLUTION: The composition includes a high sensitivity soluble film forming photoresist composition of a dendrimer calix [4] arene derivative of formula (1) and forms a lithographic pattern together with a crosslinker selected from glycoluril derivatives capable of reacting with such dendrimers under the action of an acid catalyst, a photo-acid generating agent and an organic solvent. The composition is particularly useful for forming a high resolution (