公开(公告)号：SG63813A1

公开(公告)日：1999-03-30

申请号：SG1998000340

申请日：1998-02-16

Applicant: IBM

Inventor： MIH REBECCA DORA ,  WHEELER DONALD COUGHLIN ,  BRUNNER TIMOTHY ALLAN

IPC: G03F1/26 ,  G03F1/30 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027 ,  G03F1/00 ,  G03F1/14

Abstract: A photo mask and a method for using the photo mask to make asymmetric resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the asymmetric resist pattern profile. The mask which comprises phase shifter means on one or both sides of a light shielding pattern forming material on the mask provides light passing through the mask having a different phase on each side of the light shielding material which produces an asymmetric resist pattern profile.

公开(公告)号：MY121026A

公开(公告)日：2005-12-30

申请号：MYPI9800535

申请日：1998-02-10

Applicant: IBM

Inventor： MIH REBECCA DORA ,  WHEELER DONALD COUGHLIN ,  BRUNNER TIMOTHY ALLAN

IPC: G03F9/00 ,  G03F1/26 ,  G03F1/30 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

Abstract: A PHOTO MASK (22) AND A METHOD FOR USING THE PHOTO MASK TO MAKE ASYMMETRIC RESIST PATTERNS (17, 40) ARE PROVIDED. A WAFER HAVING A RESIST COATING THEREON IS EXPOSED USING THE MASK OF THE INVENTION UNDER SPECIALLY CONTROLLED DEFOCUS CONDITIONS TO PROVIDE THE ASYMMETRIC RESIST PATTERN PROFILE. THE MASK WHICH COMPRISES PHASE SHIFTER MEANS (24) ON ONE OR BOTH SIDES OF A LIGHT SHIELDING PATTERN (25) FORMING MATERIAL ON THE MASK PROVIDES LIGHT PASSING THROUGH THE MASK HAVING A DIFFERENT PHASE ON EACH SIDE OF THE LIGHT SHIELDING MATERIAL WHICH PRODUCES AN ASYMMETRIC RESIST PATTERN PROFILE.

公开(公告)号：MY127590A

公开(公告)日：2006-12-29

申请号：MYPI0401571

申请日：1998-02-10

Applicant: IBM

Inventor： MIH REBECCA DORA ,  WHEELER DONALD COUGHLIN ,  BRUNNER TIMOTHY ALLAN

IPC: G03F7/20 ,  G03F1/26 ,  G03F1/30 ,  G03F7/00 ,  H01L21/027

Abstract: A PHOTO MASK (22) AND A METHOD FOR USING THE PHOTO MASK TO MAKE ASYMMETRIC RESIST PATTERNS (17, 40) ARE PROVIDED. A WAFER HAVING A RESIST COATING THEREON IS EXPOSED USING THE MASK OF THE INVENTION UNDER SPECIALLY CONTROLLED DEFOCUS CONDITIONS TO PROVIDE THE ASYMMETRIC RESIST PATTERN PROFILE. THE MASK WHICH COMPRISES PHASE SHIFTER MEANS (24) ON ONE OR BOTH SIDES OF A LIGHT SHIELDING PATTERN (25) FORMING MATERIAL ON THE MASK PROVIDES LIGHT PASSING THROUGH THE MASK HAVING A DIFFERENT PHASE ON EACH SIDE OF THE LIGHT SHIELDING MATERIAL WHICH PRODUCES AN ASYMMETRIC RESIST PATTERN PROFILE. (FIG. 1 )