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Patent Agency Ranking
公开(公告)号：MY127590A
公开(公告)日：2006-12-29
申请号：MYPI0401571
申请日：1998-02-10
Applicant: IBM
Inventor： MIH REBECCA DORA , WHEELER DONALD COUGHLIN , BRUNNER TIMOTHY ALLAN
IPC: G03F7/20 , G03F1/26 , G03F1/30 , G03F7/00 , H01L21/027
Abstract: A PHOTO MASK (22) AND A METHOD FOR USING THE PHOTO MASK TO MAKE ASYMMETRIC RESIST PATTERNS (17, 40) ARE PROVIDED. A WAFER HAVING A RESIST COATING THEREON IS EXPOSED USING THE MASK OF THE INVENTION UNDER SPECIALLY CONTROLLED DEFOCUS CONDITIONS TO PROVIDE THE ASYMMETRIC RESIST PATTERN PROFILE. THE MASK WHICH COMPRISES PHASE SHIFTER MEANS (24) ON ONE OR BOTH SIDES OF A LIGHT SHIELDING PATTERN (25) FORMING MATERIAL ON THE MASK PROVIDES LIGHT PASSING THROUGH THE MASK HAVING A DIFFERENT PHASE ON EACH SIDE OF THE LIGHT SHIELDING MATERIAL WHICH PRODUCES AN ASYMMETRIC RESIST PATTERN PROFILE. (FIG. 1 )
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公开(公告)号：MY132894A
公开(公告)日：2007-10-31
申请号：MYPI9803399
申请日：1998-07-24
Applicant: IBM
Inventor： BABICH KATHERINA E , BRUNNER TIMOTHY ALLAN , CALLEGARI ALESSANDRO CESARE , GRILL ALFRED , JAHNES CHRISTOPHER V , PATEL VISHNUBHAI VITTHALBHAI
IPC: C01B31/00 , H01L21/3205 , C23C14/06 , G03F7/11 , H01L21/027
Abstract: DISCLOSED IS VAPOR DEPOSITED THICK ARC LAYER AND METHOD OF PREPARING SINGLE AND TUNABLE THICK BOTTOM LAYER COATINGS BASED ON AMORPHOUS CARBON FILMS. THESE FILM CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE THE INDEX OF REFRACTION AND THE EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGHTS, IN PARTICULAR 365, 248 AND 193 NM. THIS MAKES THE FILMS EXTREMELY USEFUL TO BE USED AS THICK BOTTOM LAYERS IN A BILAYER RESIST SYSTEM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR FLUORINE ION ETCH PROCESS. BECAUSE OF THESE UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A SINGLE OR TUNABLE THICK BOTTOM LAYER AT UV AND DUV WAVELENGHTS TO PRODUCE PRACTICALLY ZERO REFLECTIONS AT THE RESIST/BOTTOM LAYER INTERFACE. THIS GREATLY IMPROVES PERFORMANCES OF SEMICONDUCTORS CHIPS.
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公开(公告)号：SG63813A1
公开(公告)日：1999-03-30
申请号：SG1998000340
申请日：1998-02-16
Applicant: IBM
Inventor： MIH REBECCA DORA , WHEELER DONALD COUGHLIN , BRUNNER TIMOTHY ALLAN
Abstract: A photo mask and a method for using the photo mask to make asymmetric resist patterns are provided. A wafer having a resist coating thereon is exposed using the mask of the invention under specially controlled defocus conditions to provide the asymmetric resist pattern profile. The mask which comprises phase shifter means on one or both sides of a light shielding pattern forming material on the mask provides light passing through the mask having a different phase on each side of the light shielding material which produces an asymmetric resist pattern profile.
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公开(公告)号：MY121026A
公开(公告)日：2005-12-30
申请号：MYPI9800535
申请日：1998-02-10
Applicant: IBM
Inventor： MIH REBECCA DORA , WHEELER DONALD COUGHLIN , BRUNNER TIMOTHY ALLAN
Abstract: A PHOTO MASK (22) AND A METHOD FOR USING THE PHOTO MASK TO MAKE ASYMMETRIC RESIST PATTERNS (17, 40) ARE PROVIDED. A WAFER HAVING A RESIST COATING THEREON IS EXPOSED USING THE MASK OF THE INVENTION UNDER SPECIALLY CONTROLLED DEFOCUS CONDITIONS TO PROVIDE THE ASYMMETRIC RESIST PATTERN PROFILE. THE MASK WHICH COMPRISES PHASE SHIFTER MEANS (24) ON ONE OR BOTH SIDES OF A LIGHT SHIELDING PATTERN (25) FORMING MATERIAL ON THE MASK PROVIDES LIGHT PASSING THROUGH THE MASK HAVING A DIFFERENT PHASE ON EACH SIDE OF THE LIGHT SHIELDING MATERIAL WHICH PRODUCES AN ASYMMETRIC RESIST PATTERN PROFILE.
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公开(公告)号：SG74649A1
公开(公告)日：2000-08-22
申请号：SG1998002939
申请日：1998-08-08
Applicant: IBM
Inventor： BABICH KATHERINA E , BRUNNER TIMOTHY ALLAN , CALLEGARI ALESSANDRO CESARE , GRILL ALFRED , JAHNES CHRISTOPHER V , PATEL VISHNUBHAI VITTHALBHAI
IPC: C01B31/00 , C23C14/06 , G03F7/11 , H01L21/027 , H01L21/3205
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