公开(公告)号：DE19952538C2

公开(公告)日：2003-03-27

申请号：DE19952538

申请日：1999-10-30

Applicant: IBM

Inventor： MONKOWSKI MICHAEL D

IPC: G10L15/02 ,  G10L15/20 ,  G10L15/00

Abstract: Energy normalization in a speech recognition system is achieved by adaptively tracking the high, mid, and low energy envelopes, wherein the adaptive high energy tracking value adapts with weighting enhanced for high energies, and the adaptive low energy tracking value adapts with weighting enhanced for low energies. A tracking method is also provided for discriminating waveform segments as being one of "speech" or "silence", and a measure of the signal to noise ratio and absolute noise floor are used as feedback means to achieve optimal speech recognition accuracy.

公开(公告)号：DE19952538A1

公开(公告)日：2000-05-11

申请号：DE19952538

申请日：1999-10-30

Applicant: IBM

Inventor： MONKOWSKI MICHAEL D

IPC: G10L15/02 ,  G10L15/20 ,  G10L15/00

Abstract: The method involves computing an upper energy trace for tracing the upper energy envelope of the speech signal; computing a lower energy trace for tracing the lower energy envelope of the speech signal; computing a middle energy trace for tracing the mean energy of the speech signal; and computing a normalized energy value from the upper energy trace for transfer to the speech recognition system. An Independent claim is also included for a speech recognition pre-processor.

公开(公告)号：CA1277780C

公开(公告)日：1990-12-11

申请号：CA564542

申请日：1988-04-19

Applicant: IBM

Inventor： MONKOWSKI MICHAEL D ,  SHEPARD JOSEPH F

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/60 ,  H01L29/417 ,  H01L29/423 ,  H01L29/732 ,  H01L29/08

Abstract: A novel vertical bi-polar device endowed with a lithography-independent tightly controlled sub-micron-wide emitter and a process of forming such a device. In one embodiment, the emitter is contacted by a self-aligned conductive sidewall linked up to a horizontal conductive link. The extrinsic base, embedded within the collector, is recessed below and laterally spaced from the emitter by an insulator layer formed on the emitter sidewall. Transistor action is confined to the small emitter within the intrinsic base, the latter being continuous with the extrinsic base. The base is contacted by means of a conductive self-aligned silicide formed on the extrinsic base. In a second embodiment, the emitter is of a desired shape with a correspondingly shaped contacting sidewall and pad integral structure. In a third embodiment, the emitter is ring shaped. In all embodiments, electrical contact to emitter is established at a distance laterally away from the transistor action area.