1.
    发明专利
    未知

    公开(公告)号:BR8903591A

    公开(公告)日:1990-03-13

    申请号:BR8903591

    申请日:1989-07-20

    Applicant: IBM

    Abstract: The method for fabricating exactly aligned apertures for use in electron and ion microscopy involves the placing of a very sharply pointed tip (1) in front of a set of extremely thin metal foils (3, 5) having closely controlled mutual distances in an atmosphere of heavy gas atoms. The application of an elevated voltage at the tip (1) will result in a sputtering operation to commence and erode the metal foils (3, 5) at a location underneath the facing tip (1). The sputtering operation is continued until the first ions are detected to emerge on the far side of the lens structure (2).

    LOW-VOLTAGE SOURCE FOR NARROW ELECTRON/ION BEAMS

    公开(公告)号:CA1311863C

    公开(公告)日:1992-12-22

    申请号:CA607014

    申请日:1989-07-28

    Applicant: IBM

    Abstract: This source for charged particles, comprises a sharply pointed tip (1) and an aperture (2) in a thin sheet of material. If the point of tip (1) is made sharp enough, i.e., if it ends in a single atom or a triter of atoms, the electric field existing between the tip (1) and the aperture (2) will cause a stream of electrons to be emitted from the tip (1), pass the aperture (2) and to continue as a beam (4) of free electrons beyond said aperture (2). The sheet (3) carrying the aperture (2) may, for example, be a carbon foil or a metallic foil, including gold. The distance of the tip (1) from the aperture (2) is in the submicron range, and so is the diameter of said aperture (2). The distance is being held essentially constant by means of a feedback loop system. The divergence of the beam (4) is

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