公开(公告)号：DE3171230D1

公开(公告)日：1985-08-08

申请号：DE3171230

申请日：1981-09-16

Applicant: IBM

Inventor： MOYER WILLIAM ANTHONY ,  WOOD ROBERT LAVIN

IPC: G03C1/72 ,  G03F7/039 ,  G03F7/30 ,  G03F7/32 ,  H01L21/027 ,  H01L21/30 ,  G03F7/26

Abstract: The invention relates to a process for forming a patterned resist mask. … The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.