PROCESS FOR FORMING A PATTERNED RESIST MASK

    公开(公告)号:DE3171230D1

    公开(公告)日:1985-08-08

    申请号:DE3171230

    申请日:1981-09-16

    Applicant: IBM

    Abstract: The invention relates to a process for forming a patterned resist mask. … The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.

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