公开(公告)号：GB2600585B

公开(公告)日：2024-03-27

申请号：GB202200773

申请日：2020-06-16

Applicant: IBM

Inventor： MUKTA FAROOQ ,  ARVIND KUMAR

IPC: H01L25/065 ,  G06F15/78 ,  H01L25/18

Abstract: Three-dimensional (3D) semiconductor memory structures and methods of forming 3D semiconductor memory structures are provided. The 3D semiconductor memory structure includes a chip comprising a memory and Through-Silicon Vias (TSVs). The 3D semiconductor memory structure further includes a hardware accelerator arranged on and coupled face-to-face to the above chip. The 3D semiconductor memory structure also includes a substrate arranged under the under the (3D) semiconductor memory structure and the hardware accelerator and attached to the TSVs and external inputs and outputs of the memory chip and the hardware accelerator.

公开(公告)号：GB2600585A

公开(公告)日：2022-05-04

申请号：GB202200773

申请日：2020-06-16

Applicant: IBM

Inventor： MUKTA FAROOQ ,  ARVIND KUMAR

IPC: G06F15/78

Abstract: Three-dimensional (3D) semiconductor memory structures and methods of forming 3D semiconductor memory structures are provided. The 3D semiconductor memory structure includes a chip comprising a memory and Through-Silicon Vias (TSVs). The 3D semiconductor memory structure further includes a hardware accelerator arranged on and coupled face-to-face to the above chip. The 3D semiconductor memory structure also includes a substrate arranged under the under the (3D) semiconductor memory structure and the hardware accelerator and attached to the TSVs and external inputs and outputs of the memory chip and the hardware accelerator.